Recent progress in tungsten oxides based memristors and their neuromorphological applications

Bo Qu, Adnan Younis, Dewei Chu

Research output: Contribution to journalReview articlepeer-review

41 Citations (Scopus)

Abstract

The advance in conventional silicon based semiconductor industry is now becoming indeterminacy as it still along the road of Moore’s Law and concomitant problems associated with it are the emergence of a number of practical issues such as short channel effect. In terms of memory applications, it is generally believed that transistors based memory devices will approach to their scaling limits up to 2018. Therefore, one of the most prominent challenges today in semiconductor industry is the need of a new memory technology which is able to combine the best characterises of current devices. The resistive switching memories which are regarded as “memristors” thus gain great attentions thanks to their specific nonlinear electrical properties. More importantly, their behaviour resembles with the transmission characteristic of synapse in biology. Therefore, the research of synapses biomimetic devices based on memristor will certainly bring a great research prospect in studying synapse emulation as well as building artificial neural networks. Tungsten oxides (WOx) exhibits many essential characteristics as a great candidate for memristive devices including: accredited endurance (over 105 cycles), stoichiometric flexibility, complimentary metal-oxide-semiconductor (CMOS) process compatibility and configurable properties including non-volatile rectification, memorization and learning functions. Herein, recent progress on Tungsten oxide based materials and its associating memory devices had been reviewed. The possible implementation of this material as a bio-inspired artificial synapse is also highlighted. The penultimate section summaries the current research progress for tungsten oxide based biological synapses and end up with several proposals that have been suggested for possible future developments. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)715-731
Number of pages17
JournalElectronic Materials Letters
Volume12
Issue number6
DOIs
Publication statusPublished - Nov 1 2016
Externally publishedYes

Keywords

  • neuromorphological applications
  • non-volatile memories
  • resistive switching
  • synaptic behavior
  • Tungsten oxides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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