Reliability modeling of circuits with multi-state aging gates

Sanja Lazarova-Molnar, Valeriu Beiu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

As electronic devices are being scaled towards single digit nanometers, the frequency of errors that such nanocircuits will exhibit is expected to increase sharply. This is both a warning sign and a call to arms for including reliability/yield from the very early circuit design phases as a fourth optimization parameter (besides area, power and speed). In this paper we present an approach for reliability modeling of circuits, where every gate is considered as a discrete stochastic model. These models have (a few) discrete states, including an operating and a faulty state. This allows for treating the aging phenomena of circuits more realistically and obtaining more accurate reliability estimates.

Original languageEnglish
Title of host publicationGrand Challenges in Modeling and Simulation Symposium 2008, GCMS 2008, Part of the 2008 Summer Simulation Multiconference, SummerSim 2008
Pages43-47
Number of pages5
Publication statusPublished - 2008
EventGrand Challenges in Modeling and Simulation Symposium 2008, GCMS 2008, Part of the 2008 Summer Simulation Multiconference, SummerSim 2008 - Edinburgh, United Kingdom
Duration: Jun 16 2008Jun 19 2008

Publication series

NameGrand Challenges in Modeling and Simulation Symposium 2008, GCMS 2008, Part of the 2008 Summer Simulation Multiconference, SummerSim 2008

Other

OtherGrand Challenges in Modeling and Simulation Symposium 2008, GCMS 2008, Part of the 2008 Summer Simulation Multiconference, SummerSim 2008
Country/TerritoryUnited Kingdom
CityEdinburgh
Period6/16/086/19/08

Keywords

  • Nano-circuits
  • Proxels
  • Reliability
  • Simulation and stochastic methods

ASJC Scopus subject areas

  • Modelling and Simulation

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