Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications

I. Watanabe; Y. Yamashita; A. Endoh; S. Hara; A. Kasamatsu; I. Hosako; H. Hamada; T. Kosugi; M. Yaita; A. E. Moutaouakil; H. Matsuzaki; O. Kagami; T. Takahashi; Y. Kawano; Y. Nakasha; N. Hara; D. Tsuji; K. Isono; S. Fujikawa; H. I. Fujishiro

doi:10.1109/CSICS.2016.7751063

Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications

I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, I. Hosako, H. Hamada, T. Kosugi, M. Yaita, A. E. Moutaouakil, H. Matsuzaki, O. Kagami, T. Takahashi, Y. Kawano, Y. Nakasha, N. Hara, D. Tsuji, K. Isono, S. Fujikawa, H. I. Fujishiro

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We have improved the performances of InP-based HEMTs and MMICs for terahertz-wave wireless communications using a high frequency carrier wave around 300 GHz in an R&D program launched by the Ministry of Internal Affairs and Communications, Japan (MIC). Furthermore, we also have developed GaN and InSb-based HEMTs in another research. In this paper, we demonstrated the performances of InP, GaN and InSb-HEMTs, and InP-MMICs for power amplifier and low-noise amplifier operated around 300 GHz.

Original language	English
Title of host publication	2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509016082
DOIs	https://doi.org/10.1109/CSICS.2016.7751063
Publication status	Published - Nov 21 2016
Externally published	Yes
Event	2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Austin, United States Duration: Oct 23 2016 → Oct 26 2016

Publication series

Name	Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Volume	2016-November
ISSN (Print)	1550-8781

Conference

Conference	2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016
Country/Territory	United States
City	Austin
Period	10/23/16 → 10/26/16

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/CSICS.2016.7751063

Cite this

Watanabe, I., Yamashita, Y., Endoh, A., Hara, S., Kasamatsu, A., Hosako, I., Hamada, H., Kosugi, T., Yaita, M., Moutaouakil, A. E., Matsuzaki, H., Kagami, O., Takahashi, T., Kawano, Y., Nakasha, Y., Hara, N., Tsuji, D., Isono, K., Fujikawa, S., & Fujishiro, H. I. (2016). Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications. In 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest Article 7751063 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSICS.2016.7751063

Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications. / Watanabe, I.; Yamashita, Y.; Endoh, A. et al.
2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest. Institute of Electrical and Electronics Engineers Inc., 2016. 7751063 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Watanabe, I, Yamashita, Y, Endoh, A, Hara, S, Kasamatsu, A, Hosako, I, Hamada, H, Kosugi, T, Yaita, M, Moutaouakil, AE, Matsuzaki, H, Kagami, O, Takahashi, T, Kawano, Y, Nakasha, Y, Hara, N, Tsuji, D, Isono, K, Fujikawa, S & Fujishiro, HI 2016, Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications. in 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest., 7751063, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016, Austin, United States, 10/23/16. https://doi.org/10.1109/CSICS.2016.7751063

Watanabe I, Yamashita Y, Endoh A, Hara S, Kasamatsu A, Hosako I et al. Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications. In 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest. Institute of Electrical and Electronics Engineers Inc. 2016. 7751063. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). doi: 10.1109/CSICS.2016.7751063

Watanabe, I. ; Yamashita, Y. ; Endoh, A. et al. / Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications. 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest. Institute of Electrical and Electronics Engineers Inc., 2016. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

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title = "Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications",

abstract = "We have improved the performances of InP-based HEMTs and MMICs for terahertz-wave wireless communications using a high frequency carrier wave around 300 GHz in an R&D program launched by the Ministry of Internal Affairs and Communications, Japan (MIC). Furthermore, we also have developed GaN and InSb-based HEMTs in another research. In this paper, we demonstrated the performances of InP, GaN and InSb-HEMTs, and InP-MMICs for power amplifier and low-noise amplifier operated around 300 GHz.",

author = "I. Watanabe and Y. Yamashita and A. Endoh and S. Hara and A. Kasamatsu and I. Hosako and H. Hamada and T. Kosugi and M. Yaita and Moutaouakil, {A. E.} and H. Matsuzaki and O. Kagami and T. Takahashi and Y. Kawano and Y. Nakasha and N. Hara and D. Tsuji and K. Isono and S. Fujikawa and Fujishiro, {H. I.}",

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doi = "10.1109/CSICS.2016.7751063",

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T1 - Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications

AU - Watanabe, I.

AU - Yamashita, Y.

AU - Endoh, A.

AU - Hara, S.

AU - Kasamatsu, A.

AU - Hosako, I.

AU - Hamada, H.

AU - Kosugi, T.

AU - Yaita, M.

AU - Moutaouakil, A. E.

AU - Matsuzaki, H.

AU - Kagami, O.

AU - Takahashi, T.

AU - Kawano, Y.

AU - Nakasha, Y.

AU - Hara, N.

AU - Tsuji, D.

AU - Isono, K.

AU - Fujikawa, S.

AU - Fujishiro, H. I.

PY - 2016/11/21

Y1 - 2016/11/21

N2 - We have improved the performances of InP-based HEMTs and MMICs for terahertz-wave wireless communications using a high frequency carrier wave around 300 GHz in an R&D program launched by the Ministry of Internal Affairs and Communications, Japan (MIC). Furthermore, we also have developed GaN and InSb-based HEMTs in another research. In this paper, we demonstrated the performances of InP, GaN and InSb-HEMTs, and InP-MMICs for power amplifier and low-noise amplifier operated around 300 GHz.

AB - We have improved the performances of InP-based HEMTs and MMICs for terahertz-wave wireless communications using a high frequency carrier wave around 300 GHz in an R&D program launched by the Ministry of Internal Affairs and Communications, Japan (MIC). Furthermore, we also have developed GaN and InSb-based HEMTs in another research. In this paper, we demonstrated the performances of InP, GaN and InSb-HEMTs, and InP-MMICs for power amplifier and low-noise amplifier operated around 300 GHz.

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BT - 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016

Y2 - 23 October 2016 through 26 October 2016

ER -

Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications

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