TY - GEN
T1 - Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications
AU - Watanabe, I.
AU - Yamashita, Y.
AU - Endoh, A.
AU - Hara, S.
AU - Kasamatsu, A.
AU - Hosako, I.
AU - Hamada, H.
AU - Kosugi, T.
AU - Yaita, M.
AU - Moutaouakil, A. E.
AU - Matsuzaki, H.
AU - Kagami, O.
AU - Takahashi, T.
AU - Kawano, Y.
AU - Nakasha, Y.
AU - Hara, N.
AU - Tsuji, D.
AU - Isono, K.
AU - Fujikawa, S.
AU - Fujishiro, H. I.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/21
Y1 - 2016/11/21
N2 - We have improved the performances of InP-based HEMTs and MMICs for terahertz-wave wireless communications using a high frequency carrier wave around 300 GHz in an R&D program launched by the Ministry of Internal Affairs and Communications, Japan (MIC). Furthermore, we also have developed GaN and InSb-based HEMTs in another research. In this paper, we demonstrated the performances of InP, GaN and InSb-HEMTs, and InP-MMICs for power amplifier and low-noise amplifier operated around 300 GHz.
AB - We have improved the performances of InP-based HEMTs and MMICs for terahertz-wave wireless communications using a high frequency carrier wave around 300 GHz in an R&D program launched by the Ministry of Internal Affairs and Communications, Japan (MIC). Furthermore, we also have developed GaN and InSb-based HEMTs in another research. In this paper, we demonstrated the performances of InP, GaN and InSb-HEMTs, and InP-MMICs for power amplifier and low-noise amplifier operated around 300 GHz.
UR - http://www.scopus.com/inward/record.url?scp=85006054193&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85006054193&partnerID=8YFLogxK
U2 - 10.1109/CSICS.2016.7751063
DO - 10.1109/CSICS.2016.7751063
M3 - Conference contribution
AN - SCOPUS:85006054193
T3 - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
BT - 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016
Y2 - 23 October 2016 through 26 October 2016
ER -