Resistive switching behaviors in electrodeposited BaTiOF4 nanorod layers

Dewei Chu, Adnan Younis, Thiam Teck Tan, Sean Li

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


A layer of well aligned crystalline barium oxofluorotitanate (BaTiOF 4) nanorod (NRLs) on Fluorine-Tin-Oxide (FTO) substrates are successfully fabricated by using an electrochemical deposition process. The capacitor with a structure of Au/BaTiOF4 NRLs/FTO exhibits bipolar resistive switching behavior that may be related to the oxygen vacancies. This gives a rise to the formation of straight and extensible conducting filaments along each vertically aligned BaTiOF4 nanorod. The stability of such a resistive switching characteristic demonstrates that BaTiOF4 NRLs are one of the promising materials for next-generation nonvolatile memory applications.

Original languageEnglish
Pages (from-to)38-40
Number of pages3
JournalSolid State Communications
Publication statusPublished - Mar 2013
Externally publishedYes


  • A. BaTiOF
  • B. Electrodeposition
  • D. Resistive switching

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


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