Abstract
A layer of well aligned crystalline barium oxofluorotitanate (BaTiOF 4) nanorod (NRLs) on Fluorine-Tin-Oxide (FTO) substrates are successfully fabricated by using an electrochemical deposition process. The capacitor with a structure of Au/BaTiOF4 NRLs/FTO exhibits bipolar resistive switching behavior that may be related to the oxygen vacancies. This gives a rise to the formation of straight and extensible conducting filaments along each vertically aligned BaTiOF4 nanorod. The stability of such a resistive switching characteristic demonstrates that BaTiOF4 NRLs are one of the promising materials for next-generation nonvolatile memory applications.
Original language | English |
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Pages (from-to) | 38-40 |
Number of pages | 3 |
Journal | Solid State Communications |
Volume | 156 |
DOIs | |
Publication status | Published - Mar 2013 |
Externally published | Yes |
Keywords
- A. BaTiOF
- B. Electrodeposition
- D. Resistive switching
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry