Resistive switching behaviors in electrodeposited BaTiOF4 nanorod layers

Dewei Chu; Adnan Younis; Thiam Teck Tan; Sean Li

doi:10.1016/j.ssc.2012.12.007

Resistive switching behaviors in electrodeposited BaTiOF₄ nanorod layers

Dewei Chu
, Adnan Younis
, Thiam Teck Tan
, Sean Li

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A layer of well aligned crystalline barium oxofluorotitanate (BaTiOF ₄) nanorod (NRLs) on Fluorine-Tin-Oxide (FTO) substrates are successfully fabricated by using an electrochemical deposition process. The capacitor with a structure of Au/BaTiOF₄ NRLs/FTO exhibits bipolar resistive switching behavior that may be related to the oxygen vacancies. This gives a rise to the formation of straight and extensible conducting filaments along each vertically aligned BaTiOF₄ nanorod. The stability of such a resistive switching characteristic demonstrates that BaTiOF₄ NRLs are one of the promising materials for next-generation nonvolatile memory applications.

Original language	English
Pages (from-to)	38-40
Number of pages	3
Journal	Solid State Communications
Volume	156
DOIs	https://doi.org/10.1016/j.ssc.2012.12.007
Publication status	Published - Mar 2013
Externally published	Yes

Keywords

A. BaTiOF
B. Electrodeposition
D. Resistive switching

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.ssc.2012.12.007

Cite this

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title = "Resistive switching behaviors in electrodeposited BaTiOF4 nanorod layers",

abstract = "A layer of well aligned crystalline barium oxofluorotitanate (BaTiOF 4) nanorod (NRLs) on Fluorine-Tin-Oxide (FTO) substrates are successfully fabricated by using an electrochemical deposition process. The capacitor with a structure of Au/BaTiOF4 NRLs/FTO exhibits bipolar resistive switching behavior that may be related to the oxygen vacancies. This gives a rise to the formation of straight and extensible conducting filaments along each vertically aligned BaTiOF4 nanorod. The stability of such a resistive switching characteristic demonstrates that BaTiOF4 NRLs are one of the promising materials for next-generation nonvolatile memory applications.",

keywords = "A. BaTiOF, B. Electrodeposition, D. Resistive switching",

author = "Dewei Chu and Adnan Younis and \{Teck Tan\}, Thiam and Sean Li",

year = "2013",

month = mar,

doi = "10.1016/j.ssc.2012.12.007",

language = "English",

volume = "156",

pages = "38--40",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Resistive switching behaviors in electrodeposited BaTiOF4 nanorod layers

AU - Chu, Dewei

AU - Younis, Adnan

AU - Teck Tan, Thiam

AU - Li, Sean

PY - 2013/3

Y1 - 2013/3

N2 - A layer of well aligned crystalline barium oxofluorotitanate (BaTiOF 4) nanorod (NRLs) on Fluorine-Tin-Oxide (FTO) substrates are successfully fabricated by using an electrochemical deposition process. The capacitor with a structure of Au/BaTiOF4 NRLs/FTO exhibits bipolar resistive switching behavior that may be related to the oxygen vacancies. This gives a rise to the formation of straight and extensible conducting filaments along each vertically aligned BaTiOF4 nanorod. The stability of such a resistive switching characteristic demonstrates that BaTiOF4 NRLs are one of the promising materials for next-generation nonvolatile memory applications.

AB - A layer of well aligned crystalline barium oxofluorotitanate (BaTiOF 4) nanorod (NRLs) on Fluorine-Tin-Oxide (FTO) substrates are successfully fabricated by using an electrochemical deposition process. The capacitor with a structure of Au/BaTiOF4 NRLs/FTO exhibits bipolar resistive switching behavior that may be related to the oxygen vacancies. This gives a rise to the formation of straight and extensible conducting filaments along each vertically aligned BaTiOF4 nanorod. The stability of such a resistive switching characteristic demonstrates that BaTiOF4 NRLs are one of the promising materials for next-generation nonvolatile memory applications.

KW - A. BaTiOF

KW - B. Electrodeposition

KW - D. Resistive switching

UR - https://www.scopus.com/pages/publications/84873582358

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U2 - 10.1016/j.ssc.2012.12.007

DO - 10.1016/j.ssc.2012.12.007

M3 - Article

AN - SCOPUS:84873582358

SN - 0038-1098

VL - 156

SP - 38

EP - 40

JO - Solid State Communications

JF - Solid State Communications

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