Resistive switching characteristics in electrochemically synthesized ZnO films

Shuhan Jing, Adnan Younis, Dewei Chu, Sean Li

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.

Original languageEnglish
Pages (from-to)28-36
Number of pages9
JournalAIMS Materials Science
Volume2
Issue number2
DOIs
Publication statusPublished - 2015
Externally publishedYes

Keywords

  • Electrochemical deposition
  • Resistive switching
  • ZnO

ASJC Scopus subject areas

  • General Materials Science

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