Abstract
Nb-modified lead-free ceramics (K0.48Bi0.52)(Mg0.02Ti0.98−xNb x)O3, (KBT-BMTNbx with x = 0.00 − 0.05) were synthesized by a conventional solid-state reaction route followed by furnace cooling. The effects of Nb-doping on the structural properties and electrical properties of KBT-BMTNbx ceramics have been investigated. The X-ray diffraction pattern indicates a mixed tetragonal and cubic phase for the pure KBT-BMTNbx ceramics. Therefore, a large piezoelectric actuator coefficient d 33* ≈ 700 pm/V, piezoelectric sensor coefficient (d 33 ≈ 133 pC/N) along with remnant polarization (P r ≈ 17.5 µC/cm2), maximum electromechanical strain ≈ 0.35% and maximum temperature (T m ≈ 336 ºC) were obtained for KBT-BMTNbx. However, with Nb-doping, a compositionally driven phase transformation occurred from mixed rhombohedral and tetragonal phases to cubic phase. Because of the excess Nb-doping in the KBT-BMT ceramics, the grain size suddenly decreased, as a result, the long-range ferroelectric phase was converted into a short-range relaxor phase. Hence, a low dielectric loss tanδ ≈ 0.02 was achieved at x = 0.02 composition. This superior dielectric performance is correlated to the crystal structure morphotropic phase boundary, optimum grain size (≈ 2 μm), maximum lattice distortion, and soft-ferroelectric effect induced by the donor doping. The main aim of recent research is to investigate P r, d 33, d 33*, S max, and reduced tanδ for practical applications in the real world.
| Original language | English |
|---|---|
| Pages (from-to) | 122-132 |
| Number of pages | 11 |
| Journal | Journal of Electroceramics |
| Volume | 51 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Oct 2023 |
| Externally published | Yes |
Keywords
- Electromechanical properties
- KBT-BMT
- Lead-free ceramics
- Morphotropic phase boundary
- Nb-doping
- Relaxor-ferroelectric
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Mechanics of Materials
- Materials Chemistry
- Electrical and Electronic Engineering