Abstract
This paper reviews several full adder designs in single electron technology (SET). Different SET designs of full adders were introduced recently. In addition to the structure and size reported for these full adders, this paper also provides a quantitative comparison in terms of delay and power dissipation. This allows for a better understanding of the advantages and disadvantages of each solution. In addition, an improved FA design based on capacitive threshold logic gates are presented.
Original language | English |
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Title of host publication | IEEE International Midwest Symposium on Circuit and Systems |
DOIs | |
Publication status | Published - Dec 27 2003 |
Event | MWSCAS'03 - Cairo, Egypt Duration: Dec 27 2003 → … |
Conference
Conference | MWSCAS'03 |
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Period | 12/27/03 → … |