RF capacitive piezoelectric displacement extraction

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The piezoelectric materials exhibit strong interaction between their mechanical and electrical properties that could be translates into innovative components and architectures. This paper reports for the extraction of a piezoelectric thin film displacement when subject to voltage stress using interdigitated capacitance measurements. An interdigital structure incorporating 0.75 μm thin film lead zirconate titanate has been constructed. With bias applied between the fingers, the spacing between them will expand, therefore reducing the total capacitance. Both capacitor theory and piezoelectric material analysis are used to extract the film displacement from the measured capacitance variation.

Original languageEnglish
Title of host publication2013 7th International Conference on Sensing Technology, ICST 2013
Number of pages5
Publication statusPublished - 2013
Event2013 7th International Conference on Sensing Technology, ICST 2013 - Wellington, New Zealand
Duration: Dec 3 2013Dec 5 2013

Publication series

NameProceedings of the International Conference on Sensing Technology, ICST
ISSN (Print)2156-8065
ISSN (Electronic)2156-8073


Other2013 7th International Conference on Sensing Technology, ICST 2013
Country/TerritoryNew Zealand


  • CV measurements
  • Displacement
  • MEMS
  • piezoelectric materials
  • sensors
  • transducer

ASJC Scopus subject areas

  • Artificial Intelligence
  • Computer Science Applications
  • Signal Processing
  • Electrical and Electronic Engineering


Dive into the research topics of 'RF capacitive piezoelectric displacement extraction'. Together they form a unique fingerprint.

Cite this