Role of the InAs monomolecular plane inserted in bulk GaAs

Nacir Tit, Maria Peressi

Research output: Contribution to journalArticlepeer-review


The effect of an InAs monomolecular plane interspersed in bulk GaAs is investigated. To this aim, we present ab initio self-consistent pseudopotential calculations of the electronic structures of InAs GaAs (001) strained layer superlattices. Both electrons and holes are found to be strongly localized in the vicinity of the inserted InAs monolayer. The latter is thus playing the role of a single quantum well, which successfully explains the observed intense and narrow low temperature (2 K) photoluminescence spectra.

Original languageEnglish
Pages (from-to)386-390
Number of pages5
JournalMaterials Science and Engineering B
Issue number1-3
Publication statusPublished - Dec 1995
Externally publishedYes


  • Gallium arsenide
  • Indium arsenide
  • Single quantum wells

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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