Role of the InAs monomolecular plane inserted in bulk GaAs

Nacir Tit; Maria Peressi

doi:10.1016/0921-5107(95)01334-2

Role of the InAs monomolecular plane inserted in bulk GaAs

Nacir Tit, Maria Peressi

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of an InAs monomolecular plane interspersed in bulk GaAs is investigated. To this aim, we present ab initio self-consistent pseudopotential calculations of the electronic structures of InAs GaAs (001) strained layer superlattices. Both electrons and holes are found to be strongly localized in the vicinity of the inserted InAs monolayer. The latter is thus playing the role of a single quantum well, which successfully explains the observed intense and narrow low temperature (2 K) photoluminescence spectra.

Original language	English
Pages (from-to)	386-390
Number of pages	5
Journal	Materials Science and Engineering B
Volume	35
Issue number	1-3
DOIs	https://doi.org/10.1016/0921-5107(95)01334-2
Publication status	Published - Dec 1995
Externally published	Yes

Keywords

Gallium arsenide
Indium arsenide
Single quantum wells

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/0921-5107(95)01334-2

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title = "Role of the InAs monomolecular plane inserted in bulk GaAs",

abstract = "The effect of an InAs monomolecular plane interspersed in bulk GaAs is investigated. To this aim, we present ab initio self-consistent pseudopotential calculations of the electronic structures of InAs GaAs (001) strained layer superlattices. Both electrons and holes are found to be strongly localized in the vicinity of the inserted InAs monolayer. The latter is thus playing the role of a single quantum well, which successfully explains the observed intense and narrow low temperature (2 K) photoluminescence spectra.",

keywords = "Gallium arsenide, Indium arsenide, Single quantum wells",

author = "Nacir Tit and Maria Peressi",

year = "1995",

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doi = "10.1016/0921-5107(95)01334-2",

language = "English",

volume = "35",

pages = "386--390",

journal = "Materials Science and Engineering B",

issn = "0921-5107",

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T1 - Role of the InAs monomolecular plane inserted in bulk GaAs

AU - Tit, Nacir

AU - Peressi, Maria

PY - 1995/12

Y1 - 1995/12

N2 - The effect of an InAs monomolecular plane interspersed in bulk GaAs is investigated. To this aim, we present ab initio self-consistent pseudopotential calculations of the electronic structures of InAs GaAs (001) strained layer superlattices. Both electrons and holes are found to be strongly localized in the vicinity of the inserted InAs monolayer. The latter is thus playing the role of a single quantum well, which successfully explains the observed intense and narrow low temperature (2 K) photoluminescence spectra.

AB - The effect of an InAs monomolecular plane interspersed in bulk GaAs is investigated. To this aim, we present ab initio self-consistent pseudopotential calculations of the electronic structures of InAs GaAs (001) strained layer superlattices. Both electrons and holes are found to be strongly localized in the vicinity of the inserted InAs monolayer. The latter is thus playing the role of a single quantum well, which successfully explains the observed intense and narrow low temperature (2 K) photoluminescence spectra.

KW - Gallium arsenide

KW - Indium arsenide

KW - Single quantum wells

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U2 - 10.1016/0921-5107(95)01334-2

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VL - 35

SP - 386

EP - 390

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 1-3

ER -

Role of the InAs monomolecular plane inserted in bulk GaAs

Abstract

Keywords

ASJC Scopus subject areas

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