@article{b6da348d2715478bab167b14ec599874,
title = "Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors",
abstract = "We report on reflective electro-optic sampling measurements of terahertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent terahertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase in the carriers' density and drift velocity.",
author = "S. Boubanga-Tombet and F. Teppe and J. Torres and {El Moutaouakil}, A. and D. Coquillat and N. Dyakonova and C. Consejo and P. Arcade and P. Nouvel and H. Marinchio and T. Laurent and C. Palermo and A. Penarier and T. Otsuji and L. Varani and W. Knap",
note = "Funding Information: The authors wish to thank Pr. M. Dyakonov for valuable discussions, and Pr. S. Bollaert and Dr. Y. Rollens (IEMN-UMR 5820) for providing the InGaAs transistors. This work was done in the frame of the TERALAB—GIS group. Supports from the SAKURA French-Japan grant, from the Japan Grant in Aid for Scientific Research from JSPS Grant No. PE09049, from GDR-I Semiconductors sources and detectors of terahertz radiation network, and from the JST-ANR WITH project are also acknowledged. ",
year = "2010",
month = dec,
day = "27",
doi = "10.1063/1.3529464",
language = "English",
volume = "97",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "26",
}