Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors

S. Boubanga-Tombet; F. Teppe; J. Torres; A. El Moutaouakil; D. Coquillat; N. Dyakonova; C. Consejo; P. Arcade; P. Nouvel; H. Marinchio; T. Laurent; C. Palermo; A. Penarier; T. Otsuji; L. Varani; W. Knap

doi:10.1063/1.3529464

Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors

S. Boubanga-Tombet
, F. Teppe
, J. Torres
, A. El Moutaouakil
, D. Coquillat
, N. Dyakonova
, C. Consejo
, P. Arcade
, P. Nouvel
, H. Marinchio
, T. Laurent
, C. Palermo
, A. Penarier
, T. Otsuji
, L. Varani
, W. Knap

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

We report on reflective electro-optic sampling measurements of terahertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent terahertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase in the carriers' density and drift velocity.

Original language	English
Article number	262108
Journal	Applied Physics Letters
Volume	97
Issue number	26
DOIs	https://doi.org/10.1063/1.3529464
Publication status	Published - Dec 27 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3529464

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Boubanga-Tombet, S., Teppe, F., Torres, J., El Moutaouakil, A., Coquillat, D., Dyakonova, N., Consejo, C., Arcade, P., Nouvel, P., Marinchio, H., Laurent, T., Palermo, C., Penarier, A., Otsuji, T., Varani, L., & Knap, W. (2010). Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors. Applied Physics Letters, 97(26), Article 262108. https://doi.org/10.1063/1.3529464

Boubanga-Tombet, S, Teppe, F, Torres, J, El Moutaouakil, A, Coquillat, D, Dyakonova, N, Consejo, C, Arcade, P, Nouvel, P, Marinchio, H, Laurent, T, Palermo, C, Penarier, A, Otsuji, T, Varani, L & Knap, W 2010, 'Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors', Applied Physics Letters, vol. 97, no. 26, 262108. https://doi.org/10.1063/1.3529464

@article{b6da348d2715478bab167b14ec599874,

title = "Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors",

abstract = "We report on reflective electro-optic sampling measurements of terahertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent terahertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase in the carriers' density and drift velocity.",

author = "S. Boubanga-Tombet and F. Teppe and J. Torres and \{El Moutaouakil\}, A. and D. Coquillat and N. Dyakonova and C. Consejo and P. Arcade and P. Nouvel and H. Marinchio and T. Laurent and C. Palermo and A. Penarier and T. Otsuji and L. Varani and W. Knap",

note = "Funding Information: The authors wish to thank Pr. M. Dyakonov for valuable discussions, and Pr. S. Bollaert and Dr. Y. Rollens (IEMN-UMR 5820) for providing the InGaAs transistors. This work was done in the frame of the TERALAB—GIS group. Supports from the SAKURA French-Japan grant, from the Japan Grant in Aid for Scientific Research from JSPS Grant No. PE09049, from GDR-I Semiconductors sources and detectors of terahertz radiation network, and from the JST-ANR WITH project are also acknowledged. ",

year = "2010",

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doi = "10.1063/1.3529464",

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T1 - Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors

AU - Boubanga-Tombet, S.

AU - Teppe, F.

AU - Torres, J.

AU - El Moutaouakil, A.

AU - Coquillat, D.

AU - Dyakonova, N.

AU - Consejo, C.

AU - Arcade, P.

AU - Nouvel, P.

AU - Marinchio, H.

AU - Laurent, T.

AU - Palermo, C.

AU - Penarier, A.

AU - Otsuji, T.

AU - Varani, L.

AU - Knap, W.

N1 - Funding Information: The authors wish to thank Pr. M. Dyakonov for valuable discussions, and Pr. S. Bollaert and Dr. Y. Rollens (IEMN-UMR 5820) for providing the InGaAs transistors. This work was done in the frame of the TERALAB—GIS group. Supports from the SAKURA French-Japan grant, from the Japan Grant in Aid for Scientific Research from JSPS Grant No. PE09049, from GDR-I Semiconductors sources and detectors of terahertz radiation network, and from the JST-ANR WITH project are also acknowledged.

PY - 2010/12/27

Y1 - 2010/12/27

N2 - We report on reflective electro-optic sampling measurements of terahertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent terahertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase in the carriers' density and drift velocity.

AB - We report on reflective electro-optic sampling measurements of terahertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent terahertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase in the carriers' density and drift velocity.

UR - https://www.scopus.com/pages/publications/78650917136

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U2 - 10.1063/1.3529464

DO - 10.1063/1.3529464

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SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262108

ER -

Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors

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