Room temperature intense terahertz emission from a dual grating gate plasmon-resonant emitter using InAlAs/InGaAs/InP material systems

Amine El Moutaouakil; Tsuneyoshi Komori; Kouhei Horiike; Tetsuya Suemitsu; Taiichi Otsuji

doi:10.1587/transele.E93.C1286

Room temperature intense terahertz emission from a dual grating gate plasmon-resonant emitter using InAlAs/InGaAs/InP material systems

Amine El Moutaouakil, Tsuneyoshi Komori, Kouhei Horiike, Tetsuya Suemitsu, Taiichi Otsuji

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.

Original language	English
Pages (from-to)	1286-1289
Number of pages	4
Journal	IEICE Transactions on Electronics
Volume	E93-C
Issue number	8
DOIs	https://doi.org/10.1587/transele.E93.C1286
Publication status	Published - Aug 2010
Externally published	Yes

Keywords

Dual grating gate dimension
Emitter
Plasmon resonance
Terahertz

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1587/transele.E93.C1286

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abstract = "We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.",

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AU - El Moutaouakil, Amine

AU - Komori, Tsuneyoshi

AU - Horiike, Kouhei

AU - Suemitsu, Tetsuya

AU - Otsuji, Taiichi

PY - 2010/8

Y1 - 2010/8

N2 - We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.

AB - We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.

KW - Dual grating gate dimension

KW - Emitter

KW - Plasmon resonance

KW - Terahertz

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JO - IEICE Transactions on Electronics

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Room temperature intense terahertz emission from a dual grating gate plasmon-resonant emitter using InAlAs/InGaAs/InP material systems

Abstract

Keywords

ASJC Scopus subject areas

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