We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.
- Dual grating gate dimension
- Plasmon resonance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering