Room temperature logic inverter on epitaxial graphene-on-silicon device

Amine El Moutaouakil, Hyun Chul Kang, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


The inverting operation of a logic inverter, using two back-gate epitaxial graphene-on-silicon field-effect transistors (GOSFETs), is demonstrated at room temperature. Thanks to the asymmetric ambipolarity of the fabricated GOSFETs, owing to the undesirable back-gate leakage, the on/off state current has been dramatically reduced. This results in a well matched input/output voltage levels for a wide VDD range from more than 1 V down to 0.5 V. The inverting operation of the device is obtained at as low VDD bias as 0.5 V. Voltage gains higher than the unity are also obtained. The experimental results are in good agreement with the simulation results made for the case of asymmetric ambipolar transistors.

Original languageEnglish
Article number070113
JournalJapanese Journal of Applied Physics
Issue number7 PART 1
Publication statusPublished - Jul 2011
Externally publishedYes

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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