TY - GEN
T1 - Room temperature terahertz detection in high-electron-mobility transistor structure using InAlAs/InGaAs/InP Material Systems
AU - El Moutaouakil, A.
AU - Suemitsu, T.
AU - Otsuji, T.
AU - Coquillat, D.
AU - Knap, W.
PY - 2010
Y1 - 2010
N2 - We report on non-resonant terahertz detection using the rectification mechanism of two-dimensional plasmons in InAlAs/InGaAs/InP high-electron- mobility transistors at 300K, demonstrating excellent sensitivity/noise performances of ∼125 V/W and ∼10-11 W/Hz0.5 for 0.30THz radiation.
AB - We report on non-resonant terahertz detection using the rectification mechanism of two-dimensional plasmons in InAlAs/InGaAs/InP high-electron- mobility transistors at 300K, demonstrating excellent sensitivity/noise performances of ∼125 V/W and ∼10-11 W/Hz0.5 for 0.30THz radiation.
UR - http://www.scopus.com/inward/record.url?scp=78649343419&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78649343419&partnerID=8YFLogxK
U2 - 10.1109/ICIMW.2010.5612598
DO - 10.1109/ICIMW.2010.5612598
M3 - Conference contribution
AN - SCOPUS:78649343419
SN - 9781424466573
T3 - IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
BT - IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
T2 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010
Y2 - 5 September 2010 through 10 September 2010
ER -