Scandium effect on the luminescence of Er-Sc silicates prepared from multi-nanolayer films

Polycrystalline Er-Sc silicates (Er_xSc_2-xSi₂O₇ and Er_xSc_2-xSiO₅) were fabricated using multilayer nanostructured films of Er₂O₃/SiO₂/Sc₂O₃ deposited on SiO₂/Si substrates by RF sputtering and thermal annealing at high temperature. The films were characterized by synchrotron radiation grazing incidence X-ray diffraction, cross-sectional transmission electron microscopy, energy-dispersive X-ray spectroscopy, and micro-photoluminescence measurements. The Er-Sc silicate phase Er_xSc_2-xSi₂O₇ is the dominant film, and Er and Sc are homogeneously distributed after thermal treatment because of the excess of oxygen from SiO₂ interlayers. The Er concentration of 6.7 × 10²¹ atoms/cm³ was achieved due to the presence of Sc that dilutes the Er concentration and generates concentration quenching. During silicate formation, the erbium diffusion coefficient in the silicate phase is estimated to be 1 × 10^-15 cm²/s at 1,250°C. The dominant Er_xSc_{2 - x}Si₂O₇ layer shows a room-temperature photoluminescence peak at 1,537 nm with the full width at half maximum (FWHM) of 1.6 nm. The peak emission shift compared to that of the Y-Er silicate (where Y and Er have almost the same ionic radii) and the narrow FWHM are due to the small ionic radii of Sc³⁺ which enhance the crystal field strength affecting the optical properties of Er³⁺ ions located at the well-defined lattice sites of the Sc silicate. The Er-Sc silicate with narrow FWHM opens a promising way to prepare photonic crystal light-emitting devices.