TY - GEN
T1 - Semi-empirical Modeling for DNA Nucleotides via Silicon Nanowire Field-effect Transistor Sensor with a Nanogap
AU - Wasfi, Asma
AU - Alnaji, Nisreen
AU - Awwad, Falah
N1 - Funding Information:
*Research supported by United Arab Emirates University with Fund number 31R128.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Lately, Silicon Nanowire field-effect transistor have attracted massive attention, due to its high-sensitivity, selectivity, label-free and real-time detection capabilities. DNA detection has obtained significance increasingly through the years. Here, a novel Silicon Nanowire field-effect transistor sensor with a nanogap placed in the middle of the sensor is studied for DNA nucleotides detection purpose. The sensor results in a distinct electronic signature for each of the different DNA nucleotides (Adenosine, Guanosine Thymidine, and Cytidine). Semi-empirical model integrated with non-equilibrium Green's function is used to analyze the DNA nucleotides detection process. The results indicate that the developed sensor could promote a novel sensing of DNA nucleotides with high accuracy.
AB - Lately, Silicon Nanowire field-effect transistor have attracted massive attention, due to its high-sensitivity, selectivity, label-free and real-time detection capabilities. DNA detection has obtained significance increasingly through the years. Here, a novel Silicon Nanowire field-effect transistor sensor with a nanogap placed in the middle of the sensor is studied for DNA nucleotides detection purpose. The sensor results in a distinct electronic signature for each of the different DNA nucleotides (Adenosine, Guanosine Thymidine, and Cytidine). Semi-empirical model integrated with non-equilibrium Green's function is used to analyze the DNA nucleotides detection process. The results indicate that the developed sensor could promote a novel sensing of DNA nucleotides with high accuracy.
KW - DNA sequencing
KW - electronic properties
KW - nanogap
KW - semi-empirical modeling
KW - silicon nanowire field-effect transistor
UR - http://www.scopus.com/inward/record.url?scp=85147013338&partnerID=8YFLogxK
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U2 - 10.1109/ICM56065.2022.10005427
DO - 10.1109/ICM56065.2022.10005427
M3 - Conference contribution
AN - SCOPUS:85147013338
T3 - 2022 International Conference on Microelectronics, ICM 2022
SP - 12
EP - 15
BT - 2022 International Conference on Microelectronics, ICM 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 International Conference on Microelectronics, ICM 2022
Y2 - 4 December 2022 through 7 December 2022
ER -