Single-walled nanotube MIS memory devices

M. Alba-Martin, T. Firmager, J. J. Atherton, M. C. Rosamond, A. J. Gallant, M. C. Petty, A. Al Ghaferi, A. Ayesh, D. Ashall, M. F. Mabrook, D. A. Zeze

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Single-Walled carbon nanotubes (SWCNTs) were embedded in hybrid Metal-Insulator-Semiconductor (MIS) memory devices using layer-by-layer (LbL) deposition with polymethylmethacrylate (PMMA) as an organic insulator. It is demonstrated that shortened SWCNTs lead to reliable and large memory windows by virtue of better encapsulation which reduces charge leakage compared with longer SWCNT devices. The capacitance-voltage (C-V) characteristics exhibit a clockwise hysteresis, indicative of electron injection into the SWCNT charge storage elements through the PMMA layer. It is also shown that devices made using sodium dodecyl sulphate (SDS)-based SWCNTs and polyethyleneimine (PEI) produce memory windows larger than 6 V, have a high charge retention of 76% and a storage density better than 2×10 12/ cm 2.

Original languageEnglish
Title of host publication2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Pages991-995
Number of pages5
DOIs
Publication statusPublished - 2011
Event2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States
Duration: Aug 15 2011Aug 19 2011

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Country/TerritoryUnited States
CityPortland, OR
Period8/15/118/19/11

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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