TY - GEN
T1 - SOI MOSFET as potential replacement of mechanical relays in Electrical systems
AU - Fardoun, Abbas A.
AU - Hassan, Mona
AU - Mohammed, Heba
AU - Jomaah, Jalal
PY - 2008
Y1 - 2008
N2 - This work is dedicated to design a power SOI (Silicon-On-Insulator) MOSFET switch to replace the Mechanical power relays used in Electrical systems. Mechanical relays are relatively large in size, expensive & have slow response time. Presented simulations & measurements show that two bulk MOSFETs in series can replace a mechanical relay in an AC drive, however, losses increase due to the series connection. Indeed, SOI power switch becomes to have better characteristics over the mechanical or Bulk MOSFET power switches in terms of higher breakdown voltage, lower specific on-resistance, low leakage current and the controllability of heat impact. Many SOI technologies are adopted for power and automation applications and the most intriguing power SOI is found to be the RF LDMOSFET. Two dimension Numerical Simulations has been achieved using Medici tool. RF LDMOSFET exhibits high breakdown voltage of 70 V and low specific on-state resistance of 0.19 mΩ cm2.
AB - This work is dedicated to design a power SOI (Silicon-On-Insulator) MOSFET switch to replace the Mechanical power relays used in Electrical systems. Mechanical relays are relatively large in size, expensive & have slow response time. Presented simulations & measurements show that two bulk MOSFETs in series can replace a mechanical relay in an AC drive, however, losses increase due to the series connection. Indeed, SOI power switch becomes to have better characteristics over the mechanical or Bulk MOSFET power switches in terms of higher breakdown voltage, lower specific on-resistance, low leakage current and the controllability of heat impact. Many SOI technologies are adopted for power and automation applications and the most intriguing power SOI is found to be the RF LDMOSFET. Two dimension Numerical Simulations has been achieved using Medici tool. RF LDMOSFET exhibits high breakdown voltage of 70 V and low specific on-state resistance of 0.19 mΩ cm2.
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U2 - 10.1109/MWSCAS.2008.4616900
DO - 10.1109/MWSCAS.2008.4616900
M3 - Conference contribution
AN - SCOPUS:54249151512
SN - 9781424421671
T3 - Midwest Symposium on Circuits and Systems
SP - 718
EP - 721
BT - 2008 IEEE International 51st Midwest Symposium on Circuits and Systems, MWSCAS
T2 - 2008 IEEE International 51st Midwest Symposium on Circuits and Systems, MWSCAS
Y2 - 10 August 2008 through 13 August 2008
ER -