Sputtered metal oxide broken gap junctions

Stephen Campbell; Forrest Johnson; Sreejith Karthikeyan; Sang Ho Song; Richard Liptak; Brian Benton

doi:10.1149/06102.0363ecst

Sputtered metal oxide broken gap junctions

Stephen Campbell, Forrest Johnson, Sreejith Karthikeyan, Sang Ho Song, Richard Liptak, Brian Benton

Research output: Contribution to journal › Conference article › peer-review

Abstract

Broken gap metal oxide tunnel junctions have been created by sputtering. Using a ceramic ZnO-SnO₂ target and a reactively sputtered copper target we deposited ZnSnO₃ and Cu₂O for the ntype and p-type layers, respectively. AlCuO₂ can also be used for the p-type layer. It shows better thermal uniformity and improved optical transmittance, but somewhat higher specific junction resistance. The band structure of the respective materials have theoretical work functions which line up with the band structure for a tandem solar cell and quantum dot LED applications. Asdeposited films demonstrated a dependence of the I-V profile with post-deposition rapid thermal anneal. Total junction specific contact resistances under 1 ohm-cm2 have been achieved.

Original language	English
Pages (from-to)	363-372
Number of pages	10
Journal	ECS Transactions
Volume	61
Issue number	2
DOIs	https://doi.org/10.1149/06102.0363ecst
Publication status	Published - 2014
Externally published	Yes
Event	6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting - Orlando, United States Duration: May 11 2014 → May 15 2014

ASJC Scopus subject areas

General Engineering

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10.1149/06102.0363ecst

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title = "Sputtered metal oxide broken gap junctions",

abstract = "Broken gap metal oxide tunnel junctions have been created by sputtering. Using a ceramic ZnO-SnO2 target and a reactively sputtered copper target we deposited ZnSnO3 and Cu2O for the ntype and p-type layers, respectively. AlCuO2 can also be used for the p-type layer. It shows better thermal uniformity and improved optical transmittance, but somewhat higher specific junction resistance. The band structure of the respective materials have theoretical work functions which line up with the band structure for a tandem solar cell and quantum dot LED applications. Asdeposited films demonstrated a dependence of the I-V profile with post-deposition rapid thermal anneal. Total junction specific contact resistances under 1 ohm-cm2 have been achieved.",

author = "Stephen Campbell and Forrest Johnson and Sreejith Karthikeyan and Song, {Sang Ho} and Richard Liptak and Brian Benton",

note = "Publisher Copyright: {\textcopyright} 2014 by The Electrochemical Society. All rights reserved.; 6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting ; Conference date: 11-05-2014 Through 15-05-2014",

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doi = "10.1149/06102.0363ecst",

language = "English",

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T1 - Sputtered metal oxide broken gap junctions

AU - Campbell, Stephen

AU - Johnson, Forrest

AU - Karthikeyan, Sreejith

AU - Song, Sang Ho

AU - Liptak, Richard

AU - Benton, Brian

PY - 2014

Y1 - 2014

N2 - Broken gap metal oxide tunnel junctions have been created by sputtering. Using a ceramic ZnO-SnO2 target and a reactively sputtered copper target we deposited ZnSnO3 and Cu2O for the ntype and p-type layers, respectively. AlCuO2 can also be used for the p-type layer. It shows better thermal uniformity and improved optical transmittance, but somewhat higher specific junction resistance. The band structure of the respective materials have theoretical work functions which line up with the band structure for a tandem solar cell and quantum dot LED applications. Asdeposited films demonstrated a dependence of the I-V profile with post-deposition rapid thermal anneal. Total junction specific contact resistances under 1 ohm-cm2 have been achieved.

AB - Broken gap metal oxide tunnel junctions have been created by sputtering. Using a ceramic ZnO-SnO2 target and a reactively sputtered copper target we deposited ZnSnO3 and Cu2O for the ntype and p-type layers, respectively. AlCuO2 can also be used for the p-type layer. It shows better thermal uniformity and improved optical transmittance, but somewhat higher specific junction resistance. The band structure of the respective materials have theoretical work functions which line up with the band structure for a tandem solar cell and quantum dot LED applications. Asdeposited films demonstrated a dependence of the I-V profile with post-deposition rapid thermal anneal. Total junction specific contact resistances under 1 ohm-cm2 have been achieved.

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Y2 - 11 May 2014 through 15 May 2014

ER -

Sputtered metal oxide broken gap junctions

Abstract

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