Statistical analysis of static noise margins

Valeriu Beiu; Mihai Tache

doi:10.1109/ECCTD.2015.7300090

Statistical analysis of static noise margins

Valeriu Beiu, Mihai Tache

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This paper presents preliminary results of a statistical analysis of the SNM of inverters (as the basic element of any SRAM bit cell). Results are statistical meaningful as probabilities are calculated accurately, and should lead to more precise, faster, and better yield estimates. Comparisons with Monte Carlo simulations are supporting such claims.

Original language	English
Title of host publication	2015 European Conference on Circuit Theory and Design, ECCTD 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479998777
DOIs	https://doi.org/10.1109/ECCTD.2015.7300090
Publication status	Published - Oct 16 2015
Externally published	Yes
Event	European Conference on Circuit Theory and Design, ECCTD 2015 - Trondheim, Norway Duration: Aug 24 2015 → Aug 26 2015

Publication series

Name	2015 European Conference on Circuit Theory and Design, ECCTD 2015

Other

Other	European Conference on Circuit Theory and Design, ECCTD 2015
Country/Territory	Norway
City	Trondheim
Period	8/24/15 → 8/26/15

Keywords

Statistical analysis
inverter
static noise margin

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/ECCTD.2015.7300090

Cite this

Statistical analysis of static noise margins. / Beiu, Valeriu; Tache, Mihai.
2015 European Conference on Circuit Theory and Design, ECCTD 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7300090 (2015 European Conference on Circuit Theory and Design, ECCTD 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Beiu, V & Tache, M 2015, Statistical analysis of static noise margins. in 2015 European Conference on Circuit Theory and Design, ECCTD 2015., 7300090, 2015 European Conference on Circuit Theory and Design, ECCTD 2015, Institute of Electrical and Electronics Engineers Inc., European Conference on Circuit Theory and Design, ECCTD 2015, Trondheim, Norway, 8/24/15. https://doi.org/10.1109/ECCTD.2015.7300090

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AB - This paper presents preliminary results of a statistical analysis of the SNM of inverters (as the basic element of any SRAM bit cell). Results are statistical meaningful as probabilities are calculated accurately, and should lead to more precise, faster, and better yield estimates. Comparisons with Monte Carlo simulations are supporting such claims.

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ER -

Statistical analysis of static noise margins

Abstract

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Keywords

ASJC Scopus subject areas

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