Steady-state photoconductivity in amorphous germanium selenide films

N. Qamhieh, G. J. Adriaenssens

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)


Steady-state photoconductivity measurements are carried out on GexSe100-x semiconductors, where 20≤x≤50, in the temperature between 290 and 470 K. The conductivity parameters vary with composition and exhibit extrema near the chemical threshold composition, at coordination number 〈r〉=2.67 where x=33%. The temperature and light intensity dependence of the photoconductivity ensure the presence of mono- and bimolecular recombination regions. The measured activation energies in the two regions suggest energy levels of recombination centers in the gap at 0.66 and about 1.37 eV from the top of the valence band.

Original languageEnglish
Pages (from-to)80-87
Number of pages8
JournalJournal of Non-Crystalline Solids
Issue number1-3
Publication statusPublished - Nov 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry


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