Steady-state photoconductivity in amorphous selenium glasses

N. Qamhieh; M. L. Benkhedir; M. Brinza; J. Willekens; G. J. Adriaenssens

doi:10.1088/0953-8984/16/23/003

Steady-state photoconductivity in amorphous selenium glasses

N. Qamhieh, M. L. Benkhedir, M. Brinza, J. Willekens, G. J. Adriaenssens

Department of Physics

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Steady-state photoconductivity measurements are carried out for bulk and thin-film amorphous selenium (a-Se) samples in the temperature range between 190 and 340 K. The temperature and light-intensity dependences of the photoconductivity reveal the presence of both mono- and bimolecular recombination regimes. The current activation energies measured in the two regions point to energy levels in the gap for the recombination centres at 0.36 ± 0.06 and 1.35 ± 0.10 eV above the valence band mobility edge. These values put a-Se in line with the other chalcogenide semiconducting glasses that exhibit negative-U behaviour.

Original language	English
Pages (from-to)	3827-3833
Number of pages	7
Journal	Journal of Physics Condensed Matter
Volume	16
Issue number	23
DOIs	https://doi.org/10.1088/0953-8984/16/23/003
Publication status	Published - Jun 16 2004

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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abstract = "Steady-state photoconductivity measurements are carried out for bulk and thin-film amorphous selenium (a-Se) samples in the temperature range between 190 and 340 K. The temperature and light-intensity dependences of the photoconductivity reveal the presence of both mono- and bimolecular recombination regimes. The current activation energies measured in the two regions point to energy levels in the gap for the recombination centres at 0.36 ± 0.06 and 1.35 ± 0.10 eV above the valence band mobility edge. These values put a-Se in line with the other chalcogenide semiconducting glasses that exhibit negative-U behaviour.",

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AU - Qamhieh, N.

AU - Benkhedir, M. L.

AU - Brinza, M.

AU - Willekens, J.

AU - Adriaenssens, G. J.

PY - 2004/6/16

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N2 - Steady-state photoconductivity measurements are carried out for bulk and thin-film amorphous selenium (a-Se) samples in the temperature range between 190 and 340 K. The temperature and light-intensity dependences of the photoconductivity reveal the presence of both mono- and bimolecular recombination regimes. The current activation energies measured in the two regions point to energy levels in the gap for the recombination centres at 0.36 ± 0.06 and 1.35 ± 0.10 eV above the valence band mobility edge. These values put a-Se in line with the other chalcogenide semiconducting glasses that exhibit negative-U behaviour.

AB - Steady-state photoconductivity measurements are carried out for bulk and thin-film amorphous selenium (a-Se) samples in the temperature range between 190 and 340 K. The temperature and light-intensity dependences of the photoconductivity reveal the presence of both mono- and bimolecular recombination regimes. The current activation energies measured in the two regions point to energy levels in the gap for the recombination centres at 0.36 ± 0.06 and 1.35 ± 0.10 eV above the valence band mobility edge. These values put a-Se in line with the other chalcogenide semiconducting glasses that exhibit negative-U behaviour.

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Steady-state photoconductivity in amorphous selenium glasses

Abstract

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