Stopping Voltage-Dependent PCM and RRAM-Based Neuromorphic Characteristics of Germanium Telluride

Yawar Abbas, Sumayya M. Ansari, Inas Taha, Heba Abunahla, Muhammad Umair Khan, Moh'd Rezeq, Haila M. Aldosari, Baker Mohammad

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Recently, phase change chalcogenides, such as monochalcogenides, are reported as switching materials for conduction-bridge-based memristors. However, the switching mechanism focused on the formation and rupture of an Ag filament during the SET and RESET, neglecting the contributions of the phase change phenomenon and the distribution and re-distribution of germanium vacancies defects. The different thicknesses of germanium telluride (GeTe)-based Ag/GeTe/Pt devices are investigated and the effectiveness of phase loops and defect loops future application in neuromorphic computing are explored. GeTe-based devices with thicknesses of 70, 100, and 200 nm, are fabricated and their electrical characteristics are investigated. Highly reproducible phase change and defect-based characteristics for a 100 nm-thick GeTe device are obtained. However, 70 and 200 nm-thick devices are unfavorable for the reliable memory characteristics. Upon further analysis of the Ag/GeTe/Pt device with 100 nm of GeTe, it is discovered that a state-of-the-art dependency of phase loops and defect loops exists on the starting and stopping voltage sweeps applied on the top Ag electrode. These findings allow for a deeper understanding of the switching mechanism of monochalcogenide-based conduction-bridge memristors.

Original languageEnglish
Article number2214615
JournalAdvanced Functional Materials
Volume34
Issue number15
DOIs
Publication statusPublished - Apr 10 2024

Keywords

  • PCM to RRAM interconversion
  • germanium telluride (GeTe)
  • germanium vacancies defects (V )
  • phase change memory
  • stopping voltage dependence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Condensed Matter Physics
  • General Materials Science
  • Electrochemistry
  • Biomaterials

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