TY - JOUR
T1 - Strain-induced band-mixing effects in ZnS/CdS (001) superlattices
AU - Tit, Nacir
AU - Murat, Altynbek
N1 - Funding Information:
One of us (NT) benefitted from a summer visit to the ICTP in Trieste, Italy. This work was partially supported by the Research Affairs at the UAE University under Grant Number 06-02-2-11/06.
PY - 2008/5/10
Y1 - 2008/5/10
N2 - The electronic properties of ZnS/CdS (001) superlattices (SLs) are investigated using the sp3s* tight-binding method versus substrate composition and valence-band offset (VBO). The results show that the electron is always confined within the CdS slabs; and also show a more striking feature due to the prominent localization of the top hole state near the interface region independently from the substrate composition (strain state). Theoretically, we have varied the VBO and inspected its effect on the interface state, and found that this latter persists to exist for VBO values within the interval [-1.4 eV, 0.6 eV]. This interface state is a manifestation of strong band mixing effects induced by the biaxial strain, and is expected to enhance the radiative efficiency of the SLs. The modelling of some available PL data, obtained for thin CdS quantum well embedded inside ZnS, has shown that the samples are of type-I with high energy bandgaps lying within the blue to ultraviolet spectral region.
AB - The electronic properties of ZnS/CdS (001) superlattices (SLs) are investigated using the sp3s* tight-binding method versus substrate composition and valence-band offset (VBO). The results show that the electron is always confined within the CdS slabs; and also show a more striking feature due to the prominent localization of the top hole state near the interface region independently from the substrate composition (strain state). Theoretically, we have varied the VBO and inspected its effect on the interface state, and found that this latter persists to exist for VBO values within the interval [-1.4 eV, 0.6 eV]. This interface state is a manifestation of strong band mixing effects induced by the biaxial strain, and is expected to enhance the radiative efficiency of the SLs. The modelling of some available PL data, obtained for thin CdS quantum well embedded inside ZnS, has shown that the samples are of type-I with high energy bandgaps lying within the blue to ultraviolet spectral region.
KW - Photoluminescence
KW - Semiconductors
KW - Superlattices
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U2 - 10.1142/S0217979208039290
DO - 10.1142/S0217979208039290
M3 - Article
AN - SCOPUS:44349113918
SN - 0217-9792
VL - 22
SP - 1997
EP - 2008
JO - International Journal of Modern Physics B
JF - International Journal of Modern Physics B
IS - 12
ER -