TY - JOUR
T1 - Strain-induced misfit dislocations in the CdTe/ZnTe (001) superlattices
AU - Tit, Nacir
N1 - Funding Information:
The author would like to thank Prof. M.W.C. Dharma-wardana for the invitation to visit the NRC-Ottawa, where this work has been accomplished. His thanks extend to A. Al-Zarouni and Profs. J. Chadi, C. Priester, and V. Velasco for stimulating discussions, as well as to Prof. A. Hamza for his critical reading of the manuscript. This work was supported by the Research Affairs at the UAE University under grant number 08-2-11/02.
PY - 2004/3/29
Y1 - 2004/3/29
N2 - At the lattice-mismatched heterojunction, the strain may cause one of two results: (i) give one more degree of freedom to the novel growth techniques to control the process of bandgap engineering, if the strained layers are kept sufficiently thin, or (ii) cause the occurrence of misfit dislocations, if the strained layers exceed a certain critical thickness. In the present investigation, the electronic band structures of the strained CdTe/ZnTe (001) superlattices (SLs) are investigated using the sp3s* tight-binding method, which includes the strain and spin-orbit coupling effects. The calculated band structures are studied versus the biaxial strain, SL layer thicknesses, and valence-band offset (VBO). Special attention has been given to the case of free-standing SLs, which were the most useful structures in interpreting the experimental results. Our theoretical results are compared to the photoluminescence experimental data and shown to be consistent with the strain morphology along the SL growth direction, as well as with the optical and structural qualities of the experimental samples.
AB - At the lattice-mismatched heterojunction, the strain may cause one of two results: (i) give one more degree of freedom to the novel growth techniques to control the process of bandgap engineering, if the strained layers are kept sufficiently thin, or (ii) cause the occurrence of misfit dislocations, if the strained layers exceed a certain critical thickness. In the present investigation, the electronic band structures of the strained CdTe/ZnTe (001) superlattices (SLs) are investigated using the sp3s* tight-binding method, which includes the strain and spin-orbit coupling effects. The calculated band structures are studied versus the biaxial strain, SL layer thicknesses, and valence-band offset (VBO). Special attention has been given to the case of free-standing SLs, which were the most useful structures in interpreting the experimental results. Our theoretical results are compared to the photoluminescence experimental data and shown to be consistent with the strain morphology along the SL growth direction, as well as with the optical and structural qualities of the experimental samples.
KW - 71.20.-b
KW - 71.25.Mg
KW - 71.50.+t
KW - 71.55.Jv
KW - 73.20.Fz
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U2 - 10.1016/j.physleta.2004.02.027
DO - 10.1016/j.physleta.2004.02.027
M3 - Article
AN - SCOPUS:1542358837
SN - 0375-9601
VL - 323
SP - 465
EP - 472
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
IS - 5-6
ER -