Strained silicon modulation field-effect transistor as a new sensor of terahertz radiation

Yahya Moubarak Meziani; Enrique Garcia; Enrique Velazquez; Enrique Diez; Amine El Moutaouakil; Taiichi Otsuji; K. Fobelets

doi:10.1088/0268-1242/26/10/105006

Strained silicon modulation field-effect transistor as a new sensor of terahertz radiation

Yahya Moubarak Meziani, Enrique Garcia, Enrique Velazquez, Enrique Diez, Amine El Moutaouakil, Taiichi Otsuji, K. Fobelets

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

In this paper, we report on room temperature detection of terahertz radiation from strained-Si modulation-doped field-effect transistors. A non-resonant signal was observed with a maximum around the threshold voltage. The signal was interpreted due to the plasma wave nonlinearities in the channel. The intensity of the signal increases for the higher applied drain-to-source current. We also observed a dependence of the signal on the polarization of the incoming radiations.

Original language	English
Article number	105006
Journal	Semiconductor Science and Technology
Volume	26
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/26/10/105006
Publication status	Published - Oct 12 2011
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/26/10/105006

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abstract = "In this paper, we report on room temperature detection of terahertz radiation from strained-Si modulation-doped field-effect transistors. A non-resonant signal was observed with a maximum around the threshold voltage. The signal was interpreted due to the plasma wave nonlinearities in the channel. The intensity of the signal increases for the higher applied drain-to-source current. We also observed a dependence of the signal on the polarization of the incoming radiations.",

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AU - Meziani, Yahya Moubarak

AU - Garcia, Enrique

AU - Velazquez, Enrique

AU - Diez, Enrique

AU - El Moutaouakil, Amine

AU - Otsuji, Taiichi

AU - Fobelets, K.

PY - 2011/10/12

Y1 - 2011/10/12

N2 - In this paper, we report on room temperature detection of terahertz radiation from strained-Si modulation-doped field-effect transistors. A non-resonant signal was observed with a maximum around the threshold voltage. The signal was interpreted due to the plasma wave nonlinearities in the channel. The intensity of the signal increases for the higher applied drain-to-source current. We also observed a dependence of the signal on the polarization of the incoming radiations.

AB - In this paper, we report on room temperature detection of terahertz radiation from strained-Si modulation-doped field-effect transistors. A non-resonant signal was observed with a maximum around the threshold voltage. The signal was interpreted due to the plasma wave nonlinearities in the channel. The intensity of the signal increases for the higher applied drain-to-source current. We also observed a dependence of the signal on the polarization of the incoming radiations.

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Strained silicon modulation field-effect transistor as a new sensor of terahertz radiation

Abstract

ASJC Scopus subject areas

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