Structural characterization and luminescence properties of ErxSc2-xSi2O7 prepared by RF sputtering

A. Najar; H. Omi; T. Tawara

Structural characterization and luminescence properties of Er_xSc_2-xSi₂O₇ prepared by RF sputtering

A. Najar, H. Omi, T. Tawara

Research output: Contribution to conference › Paper › peer-review

Abstract

Polycrystalline Er_xSc_2-xSi₂O₇ compounds were fabricated using RF-sputtering by alternating Er_xSc_2-xSi₂O₇ layers separated by SiO₂ layer. This new compounds presents excitation cross section at 980nm around 1.39x10-21cm2 with lifetime of 38s.

Original language	English
Publication status	Published - 2014
Externally published	Yes
Event	2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States Duration: Jun 8 2014 → Jun 13 2014

Conference

Conference	2014 Conference on Lasers and Electro-Optics, CLEO 2014
Country/Territory	United States
City	San Jose
Period	6/8/14 → 6/13/14

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

Cite this

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title = "Structural characterization and luminescence properties of ErxSc2-xSi2O7 prepared by RF sputtering",

abstract = "Polycrystalline ErxSc2-xSi2O7 compounds were fabricated using RF-sputtering by alternating ErxSc2-xSi2O7 layers separated by SiO2 layer. This new compounds presents excitation cross section at 980nm around 1.39x10-21cm2 with lifetime of 38s.",

author = "A. Najar and H. Omi and T. Tawara",

note = "Publisher Copyright: {\textcopyright} 2014 Optical Society of America.; 2014 Conference on Lasers and Electro-Optics, CLEO 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

language = "English",

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TY - CONF

T1 - Structural characterization and luminescence properties of ErxSc2-xSi2O7 prepared by RF sputtering

AU - Najar, A.

AU - Omi, H.

AU - Tawara, T.

PY - 2014

Y1 - 2014

N2 - Polycrystalline ErxSc2-xSi2O7 compounds were fabricated using RF-sputtering by alternating ErxSc2-xSi2O7 layers separated by SiO2 layer. This new compounds presents excitation cross section at 980nm around 1.39x10-21cm2 with lifetime of 38s.

AB - Polycrystalline ErxSc2-xSi2O7 compounds were fabricated using RF-sputtering by alternating ErxSc2-xSi2O7 layers separated by SiO2 layer. This new compounds presents excitation cross section at 980nm around 1.39x10-21cm2 with lifetime of 38s.

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UR - http://www.scopus.com/inward/citedby.url?scp=84944691705&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:84944691705

T2 - 2014 Conference on Lasers and Electro-Optics, CLEO 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Structural characterization and luminescence properties of Er_xSc_2-xSi₂O₇ prepared by RF sputtering

Abstract

Conference

ASJC Scopus subject areas

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