TY - JOUR
T1 - Studying the impact of depth of focus on 3D profile of negative photoresist material
T2 - a simulation approach
AU - Mohammed, Mohammed Ziauddin
AU - Mourad, Abdel Hamid I.
AU - Khashan, Saud A.
AU - Cherupurakal, Nizamudeen
N1 - Funding Information:
All the authors of this manuscript are grateful to support provided by the United Arab Emirates University Research Grant-31N130. In addition, the authors are widely extending their thanks to GenISys Lithography Simulation GmbH Company for their product support and services particularly company representatives, Dr. Nezih Ünal and Mr. Daniel Ritter.
Publisher Copyright:
© 2020, Springer Nature Switzerland AG.
PY - 2020/4
Y1 - 2020/4
N2 - For quality patterning of microstructures, it is essential that all process parameters are optimized to ensure well-developed 3D profile of the resist. Advances in direct laser lithography have provided maskless and rapid prototyping methods of manufacturing microstructures. Among all other process parameters, the quality of the patterned structure is critically affected by the depth of focus adjustments of the laser spot. In this study, a simulation approach is adopted and the LAB Module of GenISys lithography simulation software is implemented to determine the optimum depth of focus for negative photoresist material. Modeling and studying straight-line structure at different focusing depths at constant exposure dosages is carried out in this work. At the constant dosage of 45 mJ/cm2, the 15 µm depth of focus yields the best quality for the 3D resist profile.
AB - For quality patterning of microstructures, it is essential that all process parameters are optimized to ensure well-developed 3D profile of the resist. Advances in direct laser lithography have provided maskless and rapid prototyping methods of manufacturing microstructures. Among all other process parameters, the quality of the patterned structure is critically affected by the depth of focus adjustments of the laser spot. In this study, a simulation approach is adopted and the LAB Module of GenISys lithography simulation software is implemented to determine the optimum depth of focus for negative photoresist material. Modeling and studying straight-line structure at different focusing depths at constant exposure dosages is carried out in this work. At the constant dosage of 45 mJ/cm2, the 15 µm depth of focus yields the best quality for the 3D resist profile.
KW - Depth of focus
KW - Direct laser lithography
KW - LAB Module
KW - Photoresist material
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U2 - 10.1007/s42452-020-1950-x
DO - 10.1007/s42452-020-1950-x
M3 - Article
AN - SCOPUS:85100724446
SN - 2523-3971
VL - 2
JO - SN Applied Sciences
JF - SN Applied Sciences
IS - 4
M1 - 597
ER -