Suitability of II-VI semiconductors for photonic applications: Common-anion versus common-cation superlattices

Nacir Tit

doi:10.1116/1.1722598

Suitability of II-VI semiconductors for photonic applications: Common-anion versus common-cation superlattices

Nacir Tit

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The electronic band structures of both common-anion and common-cation II-VI superlattices (SL) were investigated using sp³s*tight-binding method. The strained CdTe/ZnTe(001), ZnS/ZnSe(001), and ZnSe/ZnTe(001) superlattice models were considered for the study. The biaxial strain were found to contribute in the valence-band splittings and yielded type-I SLs. The results show that for the type-II SLs, strain can confine the charge carrier near the interface and thus enhances the radiative efficiency.

Original language	English
Pages (from-to)	821-825
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	3
DOIs	https://doi.org/10.1116/1.1722598
Publication status	Published - May 2004

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.1722598

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abstract = "The electronic band structures of both common-anion and common-cation II-VI superlattices (SL) were investigated using sp3s*tight-binding method. The strained CdTe/ZnTe(001), ZnS/ZnSe(001), and ZnSe/ZnTe(001) superlattice models were considered for the study. The biaxial strain were found to contribute in the valence-band splittings and yielded type-I SLs. The results show that for the type-II SLs, strain can confine the charge carrier near the interface and thus enhances the radiative efficiency.",

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AB - The electronic band structures of both common-anion and common-cation II-VI superlattices (SL) were investigated using sp3s*tight-binding method. The strained CdTe/ZnTe(001), ZnS/ZnSe(001), and ZnSe/ZnTe(001) superlattice models were considered for the study. The biaxial strain were found to contribute in the valence-band splittings and yielded type-I SLs. The results show that for the type-II SLs, strain can confine the charge carrier near the interface and thus enhances the radiative efficiency.

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Suitability of II-VI semiconductors for photonic applications: Common-anion versus common-cation superlattices

Abstract

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