Surface states effect on the large photoluminescence redshift in GaN nanostructures

Keyphrases

• State Effects 100%
• Energy Band Model 33%
• Photoluminescence Characterization 33%
• N-type GaN 33%
• GaN Epitaxy 33%
• Electronic Energy Loss 33%
• Photoluminescence Mechanism 33%
• Excitation Condition 33%
• Optical Excitation 33%

Material Science

• Photoluminescence 100%
• Nanocrystalline Material 100%
• Scanning Electron Microscopy 20%
• High-Resolution Transmission Electron Microscopy 20%
• Crystal Structure 20%
• Epitaxy 20%

Engineering

• Band Model 50%
• Excitation Condition 50%