Synaptic plasticity and learning behavior in transparent tungsten oxide-based memristors

Bo Qu, Haiwei Du, Tao Wan, Xi Lin, Adnan Younis, Dewei Chu

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

In this study, by introducing reflex process into the precursor preparation and inkjet printing for high-quality top electrode deposition, we produced a solution-processed tungsten oxide based memristor, which not only overcomes the technical challenges in previous reports but also leads to an important step toward the development of high-performance memristor at low cost and ambient pressure. Various characteristics of synaptic plasticity and learning behaviors have been effectively demonstrated in the stacked device of Ag/WO3/FTO including short-term plasticity (STP) and long-term plasticity (LTP). A detailed investigation of short-term plasticity to long-term plasticity transition was given by changing the pulse number and strength. The memristive behavior in this work can be attributed to the formation/dissolution of Ag percolation paths between two electrodes. With regard to these promising features, the developed memristor may have great potential applications for bio-inspired neuromorphic devices.

Original languageEnglish
Pages (from-to)173-179
Number of pages7
JournalMaterials and Design
Volume129
DOIs
Publication statusPublished - Sept 5 2017
Externally publishedYes

Keywords

  • Learning behaviors
  • Memristive effects
  • Sol-gel
  • Synaptic plasticity
  • Tungsten oxide

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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