Abstract
We report on the synthesis and characterization of Ge 15Sb 85 phase-change nanoparticles by magnetron plasma sputtering and inert-gas condensation inside an ultra-high vacuum compatible system. Electrical and optical properties of Sb-rich nanoparticles for phase-change memory applications have been examined. The results show that phase-change properties of Ge 15Sb 85 material still exist for nanoparticles of 8.0 nm size. The amorphous to crystalline transformation proceeds at moderately elevated temperature (∼473 K) which shows that Ge 15Sb 85 nanoparticles are a good candidate for phase-change memory applications in terms of long data retention time. The observed phase transition in Ge 15Sb 85 nanoparticles is promising for down scaling the size of phase change solid-state memory devices.
| Original language | English |
|---|---|
| Article number | 034308 |
| Journal | Journal of Applied Physics |
| Volume | 112 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Aug 2012 |
ASJC Scopus subject areas
- General Physics and Astronomy
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