Temperature dependence of capacitance-voltage characteristics for GeTe2thin films

R. T. Ananth Kumar, Saleh T. Mahmoud, Khadija Said, D. Pathinettam Padiyan, N. Qamhieh

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We report the results of the crystallization behaviour, phase change and structure of GeTe2thin films to ascertain the role of the capacitance behaviour. In this regard, capacitance-voltage characteristics were performed to know the effects of bias voltage, temperature and frequency on the observed variation in capacitance. The variation of capacitance in GeTe2thin films has been explained in terms of electrons tunneling through the barrier in the quantum wells. The amorphous-crystalline phase transition has been found at a temperature of 350 K. Moreover, the structural change with temperature is discussed in terms of movement of Ge atoms from tetrahedral sites in the amorphous state to octahedral sites in the crystalline state.

Original languageEnglish
Pages (from-to)163-167
Number of pages5
JournalJournal of Alloys and Compounds
Publication statusPublished - 2017


  • Capacitance-voltage characteristics
  • Chalcogenide glasses
  • Optical properties
  • Vacuum deposition

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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