Terahertz photomixing in Strained silicon MODFET

Y. M. Meziani; A. El Moutaouakil; E. Velazquez; E. Diez; K. Fobelets; T. Otsuji

doi:10.1109/ICIMW.2010.5612856

Terahertz photomixing in Strained silicon MODFET

Y. M. Meziani, A. El Moutaouakil, E. Velazquez, E. Diez, K. Fobelets, T. Otsuji

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Strained-Si modulation doped • eld effect transistors have been studied as a photomixer within terahertz range. It was subjected to two CW lasers where δf=|f1-f2|=4 THz. A clear signal was observed with maximum located at around Vg=-0.15V and interpreted as due to the oscillation of the plasma waves under the gate bias.

Original language	English
Title of host publication	IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
DOIs	https://doi.org/10.1109/ICIMW.2010.5612856
Publication status	Published - 2010
Externally published	Yes
Event	35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 - Rome, Italy Duration: Sept 5 2010 → Sept 10 2010

Publication series

Name	IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

Conference

Conference	35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010
Country/Territory	Italy
City	Rome
Period	9/5/10 → 9/10/10

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICIMW.2010.5612856

Cite this

Meziani, Y. M., El Moutaouakil, A., Velazquez, E., Diez, E., Fobelets, K., & Otsuji, T. (2010). Terahertz photomixing in Strained silicon MODFET. In IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide [5612856] (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide). https://doi.org/10.1109/ICIMW.2010.5612856

Terahertz photomixing in Strained silicon MODFET. / Meziani, Y. M.; El Moutaouakil, A.; Velazquez, E. et al.
IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. 2010. 5612856 (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Meziani, YM, El Moutaouakil, A, Velazquez, E, Diez, E, Fobelets, K & Otsuji, T 2010, Terahertz photomixing in Strained silicon MODFET. in IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide., 5612856, IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide, 35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010, Rome, Italy, 9/5/10. https://doi.org/10.1109/ICIMW.2010.5612856

Meziani YM, El Moutaouakil A, Velazquez E, Diez E, Fobelets K, Otsuji T. Terahertz photomixing in Strained silicon MODFET. In IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. 2010. 5612856. (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide). doi: 10.1109/ICIMW.2010.5612856

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abstract = "Strained-Si modulation doped • eld effect transistors have been studied as a photomixer within terahertz range. It was subjected to two CW lasers where δf=|f1-f2|=4 THz. A clear signal was observed with maximum located at around Vg=-0.15V and interpreted as due to the oscillation of the plasma waves under the gate bias.",

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Terahertz photomixing in Strained silicon MODFET

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