The alloying and pressure dependence of band gaps in GaAs and GaAsxP1-x

M. Driz, N. Badi, B. Soudini, N. Amrane, H. Abid, N. Bouarissa, B. Khelifa, H. Aourag

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We have calculated the electronic band structures for GaAsxP1-x alloy system using the empirical nonlocal pseudopotential method. The nonlocality of the potential is described by the Gaussian model. We find that the energy gap varies sublinearly with x, with the direct-indirect transition occuring at x = 0.58. The dependence on hydrostatic pressure of the direct and indirect energy band gaps of GaAs have been calculated with the pseudopotential method. The optimized nonlocal pseudopotential reproduce the energy gap dependence with pressure within a small deviation compared to the experimental values.

Original languageEnglish
Pages (from-to)287-292
Number of pages6
JournalComputational Materials Science
Issue number2
Publication statusPublished - Mar 1994
Externally publishedYes

ASJC Scopus subject areas

  • General Computer Science
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • General Physics and Astronomy
  • Computational Mathematics


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