The alloying and pressure dependence of band gaps in GaAs and GaAsxP1-x

M. Driz; N. Badi; B. Soudini; N. Amrane; H. Abid; N. Bouarissa; B. Khelifa; H. Aourag

doi:10.1016/0927-0256(94)90110-4

The alloying and pressure dependence of band gaps in GaAs and GaAs_xP_1-x

M. Driz, N. Badi, B. Soudini, N. Amrane, H. Abid, N. Bouarissa, B. Khelifa, H. Aourag

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have calculated the electronic band structures for GaAs_xP_1-x alloy system using the empirical nonlocal pseudopotential method. The nonlocality of the potential is described by the Gaussian model. We find that the energy gap varies sublinearly with x, with the direct-indirect transition occuring at x = 0.58. The dependence on hydrostatic pressure of the direct and indirect energy band gaps of GaAs have been calculated with the pseudopotential method. The optimized nonlocal pseudopotential reproduce the energy gap dependence with pressure within a small deviation compared to the experimental values.

Original language	English
Pages (from-to)	287-292
Number of pages	6
Journal	Computational Materials Science
Volume	2
Issue number	2
DOIs	https://doi.org/10.1016/0927-0256(94)90110-4
Publication status	Published - Mar 1994
Externally published	Yes

ASJC Scopus subject areas

Computer Science(all)
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Physics and Astronomy(all)
Computational Mathematics

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10.1016/0927-0256(94)90110-4

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title = "The alloying and pressure dependence of band gaps in GaAs and GaAsxP1-x ",

abstract = "We have calculated the electronic band structures for GaAsxP1-x alloy system using the empirical nonlocal pseudopotential method. The nonlocality of the potential is described by the Gaussian model. We find that the energy gap varies sublinearly with x, with the direct-indirect transition occuring at x = 0.58. The dependence on hydrostatic pressure of the direct and indirect energy band gaps of GaAs have been calculated with the pseudopotential method. The optimized nonlocal pseudopotential reproduce the energy gap dependence with pressure within a small deviation compared to the experimental values.",

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T1 - The alloying and pressure dependence of band gaps in GaAs and GaAsxP1-x

AU - Driz, M.

AU - Badi, N.

AU - Soudini, B.

AU - Amrane, N.

AU - Abid, H.

AU - Bouarissa, N.

AU - Khelifa, B.

AU - Aourag, H.

PY - 1994/3

Y1 - 1994/3

N2 - We have calculated the electronic band structures for GaAsxP1-x alloy system using the empirical nonlocal pseudopotential method. The nonlocality of the potential is described by the Gaussian model. We find that the energy gap varies sublinearly with x, with the direct-indirect transition occuring at x = 0.58. The dependence on hydrostatic pressure of the direct and indirect energy band gaps of GaAs have been calculated with the pseudopotential method. The optimized nonlocal pseudopotential reproduce the energy gap dependence with pressure within a small deviation compared to the experimental values.

AB - We have calculated the electronic band structures for GaAsxP1-x alloy system using the empirical nonlocal pseudopotential method. The nonlocality of the potential is described by the Gaussian model. We find that the energy gap varies sublinearly with x, with the direct-indirect transition occuring at x = 0.58. The dependence on hydrostatic pressure of the direct and indirect energy band gaps of GaAs have been calculated with the pseudopotential method. The optimized nonlocal pseudopotential reproduce the energy gap dependence with pressure within a small deviation compared to the experimental values.

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JO - Computational Materials Science

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The alloying and pressure dependence of band gaps in GaAs and GaAs_xP_1-x

Abstract

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