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The role of the atomic structure on the Si/SiO
2
interface strains
I. M. Obaidat
,
N. Qamhieh
Department of Physics
Research output
:
Contribution to journal
›
Article
›
peer-review
1
Citation (Scopus)
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2
interface strains'. Together they form a unique fingerprint.
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Keyphrases
Atomic Scale
25%
Atomic Structure
100%
Bond Angle
100%
Complementary Metal-oxide-semiconductor Technology
25%
Crystalline Silicon
25%
First-principles Density Functional Theory
25%
Industrial Research
25%
Interface Model
50%
Interface Strain
100%
Interface Structure
25%
Leftovers
25%
Local Density Approximation
25%
MOSFET
25%
Oxygen Atom
25%
Scale Levels
25%
Shear Strain
50%
Si-O Bond
100%
Si-SiO2 Interface
100%
Tensile Strain
50%
Underground Physics
25%
Engineering
Complementary Metal-Oxide-Semiconductor
50%
Crystalline Silicon
50%
Industrial Research
50%
Local Density Approximation
50%
Oxygen Atom
50%
Scale Level
50%
Scale Structure
50%
Shear Strain
100%
Tensile Strain
100%
Material Science
Atomic Structure
100%
Complementary Metal-Oxide-Semiconductor Device
50%
Interface Structure
50%
Metal-Oxide-Semiconductor Field-Effect Transistor
50%
Shear Strain
100%
Tensile Strain
100%