The Uniaxial Strain Effect on the Ternary Alloy Semiconductor Ga1−xAlxP

N. Badi; H. Abid; B. Soudini; N. Amrane; M. Driz; J. P. Dufour; H. Aourag; B. Khelifa

doi:10.1002/pssb.2221840210

The Uniaxial Strain Effect on the Ternary Alloy Semiconductor Ga_1−xAl_xP

N. Badi, H. Abid, B. Soudini, N. Amrane, M. Driz, J. P. Dufour, H. Aourag, B. Khelifa

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of static uniaxial compression along the cubic direction 〈100〉 is studied. The empirical pseudo‐potential method (EPM) within the so‐called virtual crystal approximation (VCA) is used to compute the electronic charge densities at selected k‐points of the valence and the conduction band edges in Ga_1−xAl_xP. These charge densities are used to study the modification of the bonding and the electronic properties of the alloy with respect to the composition and the lattice constant variations along the 〈100〉 direction.

Original language	English
Pages (from-to)	365-372
Number of pages	8
Journal	physica status solidi (b)
Volume	184
Issue number	2
DOIs	https://doi.org/10.1002/pssb.2221840210
Publication status	Published - Aug 1 1994
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "The effect of static uniaxial compression along the cubic direction 〈100〉 is studied. The empirical pseudo‐potential method (EPM) within the so‐called virtual crystal approximation (VCA) is used to compute the electronic charge densities at selected k‐points of the valence and the conduction band edges in Ga1−xAlxP. These charge densities are used to study the modification of the bonding and the electronic properties of the alloy with respect to the composition and the lattice constant variations along the 〈100〉 direction.",

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AU - Amrane, N.

AU - Driz, M.

AU - Dufour, J. P.

AU - Aourag, H.

AU - Khelifa, B.

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AB - The effect of static uniaxial compression along the cubic direction 〈100〉 is studied. The empirical pseudo‐potential method (EPM) within the so‐called virtual crystal approximation (VCA) is used to compute the electronic charge densities at selected k‐points of the valence and the conduction band edges in Ga1−xAlxP. These charge densities are used to study the modification of the bonding and the electronic properties of the alloy with respect to the composition and the lattice constant variations along the 〈100〉 direction.

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The Uniaxial Strain Effect on the Ternary Alloy Semiconductor Ga_1−xAl_xP

Abstract

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