The Uniaxial Strain Effect on the Ternary Alloy Semiconductor Ga1−xAlxP

N. Badi, H. Abid, B. Soudini, N. Amrane, M. Driz, J. P. Dufour, H. Aourag, B. Khelifa

Research output: Contribution to journalArticlepeer-review


The effect of static uniaxial compression along the cubic direction 〈100〉 is studied. The empirical pseudo‐potential method (EPM) within the so‐called virtual crystal approximation (VCA) is used to compute the electronic charge densities at selected k‐points of the valence and the conduction band edges in Ga1−xAlxP. These charge densities are used to study the modification of the bonding and the electronic properties of the alloy with respect to the composition and the lattice constant variations along the 〈100〉 direction.

Original languageEnglish
Pages (from-to)365-372
Number of pages8
Journalphysica status solidi (b)
Issue number2
Publication statusPublished - Aug 1 1994
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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