TY - GEN
T1 - Thermal Annealing induced relaxation of compressive strain in porous GaN structures
AU - Slimane, Ahmed B.
AU - Najar, Adel
AU - Ng, Tien K.
AU - Ooi, Boon S.
PY - 2012
Y1 - 2012
N2 - The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.
AB - The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.
UR - http://www.scopus.com/inward/record.url?scp=84871821142&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84871821142&partnerID=8YFLogxK
U2 - 10.1109/IPCon.2012.6359296
DO - 10.1109/IPCon.2012.6359296
M3 - Conference contribution
AN - SCOPUS:84871821142
SN - 9781457707315
T3 - 2012 IEEE Photonics Conference, IPC 2012
SP - 921
EP - 922
BT - 2012 IEEE Photonics Conference, IPC 2012
T2 - 25th IEEE Photonics Conference, IPC 2012
Y2 - 23 September 2012 through 27 September 2012
ER -