Abstract
This paper reviews silicon implementations of threshold logic gates, covering several decades. It details numerous VLSI implementations including: capacitive (switched capacitor and floating gate with their variations), conductance/current (pseudo-nMOS, output-wired-inverters, and a plethora of solutions evolved from them), as well as many differential solutions. Nanoelectronic implementations (e.g., based on negative resistance devices and on single electron technologies) are shortly mentioned
Original language | English |
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Title of host publication | IEEE International Midwest Symposium on Circuit and Systems |
DOIs | |
Publication status | Published - Dec 27 2003 |
Event | MWSCAS'03 - Cairo, Egypt Duration: Dec 27 2003 → … |
Conference
Conference | MWSCAS'03 |
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Period | 12/27/03 → … |