Threshold voltage variations make full adders reliabilities similar

Walid Ibrahim; Valeriu Beiu

doi:10.1109/TNANO.2010.2066573

Threshold voltage variations make full adders reliabilities similar

Walid Ibrahim, Valeriu Beiu

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Addition is the most widely used arithmetic operation in digital applications. The reliability of full adder (FA) cells is crucial as they affect arithmetic logic and floating-point units, as well as cache/memory address calculations. This letter studies the reliability of five different FA designs. The analysis starts from the device level by estimating the effects threshold voltage variations will have on the reliability of scaled CMOS transistors. These estimations will then be used to calculate the reliability of the sum and carry-out signals. This letter will also briefly explore the effects of increasing the reliability of devices and of using gate-level redundancy schemes on the reliability of FAs.

Original language	English
Article number	5549917
Pages (from-to)	664-667
Number of pages	4
Journal	IEEE Transactions on Nanotechnology
Volume	9
Issue number	6
DOIs	https://doi.org/10.1109/TNANO.2010.2066573
Publication status	Published - Nov 2010

Keywords

Adders
Bayesian network (BN)
CMOS
reliability
threshold voltage
variations

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2010.2066573

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AB - Addition is the most widely used arithmetic operation in digital applications. The reliability of full adder (FA) cells is crucial as they affect arithmetic logic and floating-point units, as well as cache/memory address calculations. This letter studies the reliability of five different FA designs. The analysis starts from the device level by estimating the effects threshold voltage variations will have on the reliability of scaled CMOS transistors. These estimations will then be used to calculate the reliability of the sum and carry-out signals. This letter will also briefly explore the effects of increasing the reliability of devices and of using gate-level redundancy schemes on the reliability of FAs.

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KW - threshold voltage

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Threshold voltage variations make full adders reliabilities similar

Abstract

Keywords

ASJC Scopus subject areas

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