Abstract
Using an sp3s* empirical tight binding method, we calculate energy band gap and electronic band structure of the zinc-blende ternary alloy ZnSxSe1-x. The band gap composition is calculated using an extended version of the virtual crystal approximation, which introduce an empirical correction factor that takes into account the non-linear dependence of the band gap with the composition. The results compare well with the experimental data. The ionicity character and the refractive index are also calculated.
Original language | English |
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Pages (from-to) | 147-153 |
Number of pages | 7 |
Journal | Physica B: Condensed Matter |
Volume | 337 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - Sept 2003 |
Externally published | Yes |
Keywords
- Band structure
- Semiconductor alloys
- Tight binding
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering