Tunable (La, Sr)MnO3 (LSMO) ferromagnetic thin films for radio frequency applications

Mahmoud Al Ahmad; Young Taek Lee; Chae Il Cheon; Eui Jung Yun; Robert Plana

doi:10.1109/LMWC.2008.2008575

Tunable (La, Sr)MnO₃ (LSMO) ferromagnetic thin films for radio frequency applications

Mahmoud Al Ahmad, Young Taek Lee, Chae Il Cheon, Eui Jung Yun, Robert Plana

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this letter, an original work in tunable (La, Sr)MnO₃ (LSMO) ferromagnetic thin film materials for radio frequency applications is presented. 400 nm thick LSMO thin film is formed by the chemical solution deposition on the top of indium tin oxide (ITO)/SiO₂/Si heterostructure. Interdigitated capacitor structures are used to study the behavior of LSMO thin film materials when a dc electrostatic field bias is applied. With increasing the dc voltage bias, the differential resistance of the film decreases. This change is pronounced in the measured scattering parameters of the device. The presented structure exhibits a tunable wide resistance.

Original language	English
Article number	4729657
Pages (from-to)	36-38
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	19
Issue number	1
DOIs	https://doi.org/10.1109/LMWC.2008.2008575
Publication status	Published - Jan 2009
Externally published	Yes

Keywords

(La, Sr)MnO (LSMO)
Ferromagnetic
Material parameters
Tunability
Tunable circuit
Tunable inductor

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/LMWC.2008.2008575

Cite this

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abstract = "In this letter, an original work in tunable (La, Sr)MnO3 (LSMO) ferromagnetic thin film materials for radio frequency applications is presented. 400 nm thick LSMO thin film is formed by the chemical solution deposition on the top of indium tin oxide (ITO)/SiO2/Si heterostructure. Interdigitated capacitor structures are used to study the behavior of LSMO thin film materials when a dc electrostatic field bias is applied. With increasing the dc voltage bias, the differential resistance of the film decreases. This change is pronounced in the measured scattering parameters of the device. The presented structure exhibits a tunable wide resistance.",

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T1 - Tunable (La, Sr)MnO3 (LSMO) ferromagnetic thin films for radio frequency applications

AU - Al Ahmad, Mahmoud

AU - Lee, Young Taek

AU - Il Cheon, Chae

AU - Yun, Eui Jung

AU - Plana, Robert

PY - 2009/1

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AB - In this letter, an original work in tunable (La, Sr)MnO3 (LSMO) ferromagnetic thin film materials for radio frequency applications is presented. 400 nm thick LSMO thin film is formed by the chemical solution deposition on the top of indium tin oxide (ITO)/SiO2/Si heterostructure. Interdigitated capacitor structures are used to study the behavior of LSMO thin film materials when a dc electrostatic field bias is applied. With increasing the dc voltage bias, the differential resistance of the film decreases. This change is pronounced in the measured scattering parameters of the device. The presented structure exhibits a tunable wide resistance.

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KW - Material parameters

KW - Tunability

KW - Tunable circuit

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