Tunable low-field interdigitated barium strontium titanate capacitors

Mahmoud Al Ahmad, G. Leclerc, M. Brunet, N. Mauran, L. Bary, R. Plana, S. Payan, D. Michau, M. Maglione

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The rapid growth of communication systems demand for wide tunable low loss microwave components. Barium strontium titanate (BST) voltage dependent permittivity has shown a greal potential impact for the fabrication of frequency agile components. In this work, BST interdigital capacitor (IDC) on silicon substrate exhibiting high tunability at low bias voltages is presented. The interdigital capacitor with a 3 μm gap is characterized. The tunabilily of 3:1 is obtained at bias voltage of 5 V. This corresponds to a 3.5 μm electrode gap width and a 5 V d c bias. Microwave measurements reveal a zero bias film quality of 50 around 30 GHz.

Original languageEnglish
Title of host publication2007 Asia-Pacific Microwave Conference, APMC
DOIs
Publication statusPublished - 2007
Externally publishedYes
EventAsia-Pacific Microwave Conference, APMC 2007 - Bangkok, Thailand
Duration: Dec 11 2007Dec 14 2007

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Other

OtherAsia-Pacific Microwave Conference, APMC 2007
Country/TerritoryThailand
CityBangkok
Period12/11/0712/14/07

Keywords

  • BST
  • Capacitors
  • Thin film
  • Tunable circuit
  • Varactors

ASJC Scopus subject areas

  • General Engineering

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