TY - GEN
T1 - Tuning of barium strontium titanate (BST) thin film materials employing high resistive thin indium tin oxide (ITO) layer
AU - Al Ahmad, Mahmoud
AU - Payan, Sandrine
AU - Michau, Dominique
AU - Maglione, Mario
AU - Plana, Robert
PY - 2008
Y1 - 2008
N2 - The rapid growth of communication systems demands for wide tunable low loss microwave components. Barium strontium titanate (BST) voltage dependent permittivity has shown a great potential impact for the fabrication of frequency agile components. In this work, the indium tin oxide (ITO) high resistive thin layer is used as a bottom electrode to tune BST based structures such as parallel plate capacitor and CPW line. The tunability is reduced due to voltage drop in the ITO layer which exhibits a high dc resistance. The effect of using ITO thin layer in microwave device is explored.
AB - The rapid growth of communication systems demands for wide tunable low loss microwave components. Barium strontium titanate (BST) voltage dependent permittivity has shown a great potential impact for the fabrication of frequency agile components. In this work, the indium tin oxide (ITO) high resistive thin layer is used as a bottom electrode to tune BST based structures such as parallel plate capacitor and CPW line. The tunability is reduced due to voltage drop in the ITO layer which exhibits a high dc resistance. The effect of using ITO thin layer in microwave device is explored.
UR - http://www.scopus.com/inward/record.url?scp=62349136125&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=62349136125&partnerID=8YFLogxK
U2 - 10.1109/EUMC.2008.4751576
DO - 10.1109/EUMC.2008.4751576
M3 - Conference contribution
AN - SCOPUS:62349136125
SN - 9782874870064
T3 - Proceedings of the 38th European Microwave Conference, EuMC 2008
SP - 809
EP - 812
BT - Proceedings of the 38th European Microwave Conference, EuMC 2008
T2 - 38th European Microwave Conference, EuMC 2008
Y2 - 27 October 2008 through 31 October 2008
ER -