Ultra-low power SRAM cells with unconventional sizing

M. Al Kaabi; A. Al Ali; H. Al Janahi; M. Al Kendi; M. Tache; V. Beiu

doi:10.1109/NANO.2014.6968117

Ultra-low power SRAM cells with unconventional sizing

M. Al Kaabi, A. Al Ali, H. Al Janahi, M. Al Kendi, M. Tache, V. Beiu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Variations and noises are ubiquitous, but are still poorly understood and analyzed simplistically, leading in most cases to substantial overdesign. Lately, a novel reliability-centric design method based on unconventionally sizing transistors has been suggested. In this paper our goal is to design, simulate, analyze and compare the benefits of unconventional sizing when applied to ultra-low voltage/power/energy (ULV/P/E) SRAM cells. The re-sized SRAM cells are more reliable and have the potential to operate correctly at supply voltages below those achieved using classically sized SRAM cells. Our preliminary simulation results support such claims, while future directions of research will be suggested.

Original language	English
Title of host publication	Proceedings of the IEEE Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	308-313
Number of pages	6
ISBN (Electronic)	9781479956227
DOIs	https://doi.org/10.1109/NANO.2014.6968117
Publication status	Published - Nov 26 2014
Event	2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014 - Toronto, Canada Duration: Aug 18 2014 → Aug 21 2014

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Electronic)	1944-9399

Other

Other	2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014
Country/Territory	Canada
City	Toronto
Period	8/18/14 → 8/21/14

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation
Instrumentation

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10.1109/NANO.2014.6968117

Cite this

Al Kaabi, M., Al Ali, A., Al Janahi, H., Al Kendi, M., Tache, M., & Beiu, V. (2014). Ultra-low power SRAM cells with unconventional sizing. In Proceedings of the IEEE Conference on Nanotechnology (pp. 308-313). Article 6968117 (Proceedings of the IEEE Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2014.6968117

Ultra-low power SRAM cells with unconventional sizing. / Al Kaabi, M.; Al Ali, A.; Al Janahi, H. et al.
Proceedings of the IEEE Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2014. p. 308-313 6968117 (Proceedings of the IEEE Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Al Kaabi, M, Al Ali, A, Al Janahi, H, Al Kendi, M, Tache, M & Beiu, V 2014, Ultra-low power SRAM cells with unconventional sizing. in Proceedings of the IEEE Conference on Nanotechnology., 6968117, Proceedings of the IEEE Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 308-313, 2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014, Toronto, Canada, 8/18/14. https://doi.org/10.1109/NANO.2014.6968117

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abstract = "Variations and noises are ubiquitous, but are still poorly understood and analyzed simplistically, leading in most cases to substantial overdesign. Lately, a novel reliability-centric design method based on unconventionally sizing transistors has been suggested. In this paper our goal is to design, simulate, analyze and compare the benefits of unconventional sizing when applied to ultra-low voltage/power/energy (ULV/P/E) SRAM cells. The re-sized SRAM cells are more reliable and have the potential to operate correctly at supply voltages below those achieved using classically sized SRAM cells. Our preliminary simulation results support such claims, while future directions of research will be suggested.",

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AB - Variations and noises are ubiquitous, but are still poorly understood and analyzed simplistically, leading in most cases to substantial overdesign. Lately, a novel reliability-centric design method based on unconventionally sizing transistors has been suggested. In this paper our goal is to design, simulate, analyze and compare the benefits of unconventional sizing when applied to ultra-low voltage/power/energy (ULV/P/E) SRAM cells. The re-sized SRAM cells are more reliable and have the potential to operate correctly at supply voltages below those achieved using classically sized SRAM cells. Our preliminary simulation results support such claims, while future directions of research will be suggested.

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Ultra-low power SRAM cells with unconventional sizing

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