Abstract
In this paper, a new single-switch nonisolated dcdc converter with high voltage transfer gain and reduced semiconductor voltage stress is proposed. The proposed topology utilizes a hybrid switched-capacitor technique for providing a high voltage gain without an extreme switch duty cycle and yet enabling the use of a lower voltage and RDS-ON MOSFET switch so as to reduce cost, switch conduction, and turn-on losses. In addition, the low voltage stress across the diodes allows the use of Schottky rectifiers for alleviating the reverse-recovery current problem, leading to a further reduction in the switching, and conduction losses. The principle of operation and a comparison with other high step-up topologies are presented. Two extensions of the proposed converter are also introduced and discussed. Simulation and experimental results are also presented to demonstrate the effectiveness of the proposed scheme.
| Original language | English |
|---|---|
| Article number | 5510128 |
| Pages (from-to) | 2025-2034 |
| Number of pages | 10 |
| Journal | IEEE Transactions on Industry Applications |
| Volume | 46 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - Sept 2010 |
Keywords
- DCDC power conversion
- high step-up converter
- pulsewidth modulated
- switched-mode power supplies
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering
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