Ultrasensitive H2S gas sensors based on p-type WS2 hybrid materials

Georgies Alene Asres, José J. Baldoví, Aron Dombovari, Topias Järvinen, Gabriela Simone Lorite, Melinda Mohl, Andrey Shchukarev, Alejandro Pérez Paz, Lede Xian, Jyri Pekka Mikkola, Anita Lloyd Spetz, Heli Jantunen, Ángel Rubio, Krisztian Kordás

Research output: Contribution to journalArticlepeer-review

88 Citations (Scopus)

Abstract

Owing to their higher intrinsic electrical conductivity and chemical stability with respect to their oxide counterparts, nanostructured metal sulfides are expected to revive materials for resistive chemical sensor applications. Herein, we explore the gas sensing behavior of WS2 nanowire-nanoflake hybrid materials and demonstrate their excellent sensitivity (0.043 ppm-1) as well as high selectivity towards H2S relative to CO, NH3, H2, and NO (with corresponding sensitivities of 0.002, 0.0074, 0.0002, and 0.0046 ppm-1, respectively). Gas response measurements, complemented with the results of X-ray photoelectron spectroscopy analysis and first-principles calculations based on density functional theory, suggest that the intrinsic electronic properties of pristine WS2 alone are not sufficient to explain the observed high sensitivity towards H2S. A major role in this behavior is also played by O doping in the S sites of the WS2 lattice. The results of the present study open up new avenues for the use of transition metal disulfide nanomaterials as effective alternatives to metal oxides in future applications for industrial process control, security, and health and environmental safety. [Figure not available: see fulltext.].

Original languageEnglish
Pages (from-to)4215-4224
Number of pages10
JournalNano Research
Volume11
Issue number8
DOIs
Publication statusPublished - Aug 1 2018
Externally publishedYes

Keywords

  • HS
  • O doping
  • WS
  • gas sensor
  • nanoflake
  • nanowire

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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