Abstract
The empirical pseudopotential method (EPM) combined with the virtual crystal approximation "VCA" are used to compute electronic charge densities at Γ and X k-points of the valence and conduction band edges in the ternary GaAlP semiconductor alloy. These charge densities are used to study the modifications of the bonding and electronic properties of the alloy with respect to the molar fraction of Al in GaP.
Original language | English |
---|---|
Pages (from-to) | 243-249 |
Number of pages | 7 |
Journal | Materials Chemistry and Physics |
Volume | 38 |
Issue number | 3 |
DOIs | |
Publication status | Published - Aug 1994 |
Externally published | Yes |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics