Valence and conduction band-edges-charge densities in Ga1-xAlxP mixed crystals

N. Badi, H. Abid, B. Soudini, N. Amrane, M. Driz, B. Khelifa, H. Aourag

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The empirical pseudopotential method (EPM) combined with the virtual crystal approximation "VCA" are used to compute electronic charge densities at Γ and X k-points of the valence and conduction band edges in the ternary GaAlP semiconductor alloy. These charge densities are used to study the modifications of the bonding and electronic properties of the alloy with respect to the molar fraction of Al in GaP.

Original languageEnglish
Pages (from-to)243-249
Number of pages7
JournalMaterials Chemistry and Physics
Issue number3
Publication statusPublished - Aug 1994
Externally publishedYes

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


Dive into the research topics of 'Valence and conduction band-edges-charge densities in Ga1-xAlxP mixed crystals'. Together they form a unique fingerprint.

Cite this