Voltage-dependent capacitance and conductance in Se films

This study explores the electrical properties of selenium thin films synthesized using the thermal evaporation method. The electrical properties of capacitance and conductance were investigated for DC bias voltages swept from −20 V to +20 V. The influence of temperature on the electrical properties was characterized by measurements performed at temperatures ranging from room temperature to 400 K. The conductance of the film above 370 K was observed to change with applied voltage in a manner similar to that of a p–n junction. However, in contrast to the p–n junction, the threshold voltage, determined from conductance–voltage curves, was increased with temperature. The results are explained by considering barrier potentials established at the boundaries between crystalline islands.